Vetenskapliga artiklar vid Fasta Tillståndets Elektronik 1950-1989
Hitta här de vetenskapliga artiklarna från Avdelningen för Fasta Tillståndets Elektronik i perioden mellan 1950 och 1989 enligt DIVA katalog:
Publikationer
Artiklar i tidskrift (granskade)
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A fast approach for calculations of silicon MESFET characteristics from SUPREM doping profiles
Ingår i Solid-State Electronics, s. 711-716, 1989.
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A miniaturized micromachined pressure sensor for biomedical applications
Ingår i Clinical physics and Physiological measurement, 1989.
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A self consistent approach of IV measurements on rectifying metal-semiconductor contacts
Ingår i Solid-State Electronics, s. 961-964, 1989.
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An improved silicon p-channel MESFET with a BF2 implanted thin channel and ErSi1 gate
Ingår i Solid-State Electronics, s. 993-996, 1989.
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Bulk silicon technology for complementary MESFET's
Ingår i Electronic Letters, s. 565-566, 1989.
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Computer simulations of Schottky contacts with a non-constant recombination velocity
Ingår i Solid-State Electronics, s. 363-367, 1989.
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Design of a solid-state gyroscopic sensor made of quartz
Ingår i Sensors and Actuators A-Physical, s. 293-296, 1989.
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Fabrication of three-dimensional silicon structures by means of doping-selective etching (DSE)
Ingår i Sensors and Actuators A-Physical, s. 67-82, 1989.
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Fiberoptic sensors - a mricromechanical approach
Ingår i Sensors and Actuators A-Physical, s. 157-166, 1989.
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Light scanning techniques - a critical survey
Ingår i International journal of optoelectronics, s. 33-51, 1989.
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Micromachining of silicon for thermal and position-sensitive nuclear detector applications
Ingår i Nuclear Instruments and Methods in Physics Research Section A, s. 555-559, 1989.
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Modeling of recative sputtering of titanium boride
Ingår i Thin Solid Films, s. 241-251, 1989.
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Passive silicon transensor intended for biomedical remote pressure monitoring
Ingår i Sensors and Actuators A-Physical, s. 58-61, 1989.
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Perpendicular walls fabricated in <100>-oriented silicon by anisotropic wet etching
Ingår i Sensors and materials, s. 313-320, 1989.
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Process modelling of reactive sputtering
Ingår i Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, s. 1225-1229, 1989.
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Process modelling of reactive sputtering
Ingår i Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, s. 1225-1229, 1989.
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Reactive sputtering of titanium boride
Ingår i Thin Solid Films, s. 133-141, 1989.
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Reactively sputtered titanium boride thin films
Ingår i Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, s. 162-165, 1989.
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Silicon etching in a direct current glow discharge of CF4/O2 and NF3/O2
Ingår i Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, s. 1321-1324, 1989.
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Si/ti/TiB2/A1 structures investigated as contacts in microelectronic devices
Ingår i Solid-State Electronics, s. 385-389, 1989.
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Substrate dependent escape depths of sputtered substrate atoms through thin film overlayers
Ingår i Thin Solid Films, 1989.
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Subthreshold behaviour of silicon MESFET's on SOS and bulk silicon substrates
Ingår i Solid-State Electronics, s. 931-934, 1989.
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Superhigh-rate plasma jet etching of silicon
Ingår i Applied Physics Letters, s. 1615-1617, 1989.
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The use of process modelling for optimum design of reactive sputtering processes
Ingår i Journal of Surface and Coatings Technology, s. 465-474, 1989.
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Use of residue arithmetic for resolving ambiguity in phase measruements
Ingår i IEEE Transactions on Instrumentation and Measurement, s. 1007-1009, 1989.
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A batchfabricated non-reverse valve with cantilever beam manufactured by micromachining of silicon
Ingår i Sensors and Actuators A-Physical, s. 389-396, 1988.
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A novel fiber-optic voltmeter
Ingår i International journal of optoelectronics, s. 299-309, 1988.
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A physical model for eliminating instabilities in reactive sputtering
Ingår i Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, s. 1832-, 1988.
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A silicon light modulator
Ingår i Journal Phys E:Sci Instrum, s. 680-685, 1988.
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Complementary Si MESFET concept using silicon-on-sapphire technology
Ingår i IEEE Electron Device Letters, s. 47-49, 1988.
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DC-etching of polysilicon with fluorine chemistry
Ingår i Vacuum, s. 813-, 1988.
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Determination of the mobility profile in silicon-on-sapphire material using the "FAT"FAT-principle
Ingår i Solid-State Electronics, s. 1583-1585, 1988.
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Development of a wireless stethoscope for auscultatory
Ingår i Medical & Biological Engineering & Computing, s. 317-320, 1988.
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Development of a wireless stethoscope for auscultatory monitoring during anaesthesia
Ingår i Medical & Biological Engineering & Computing, 1988.
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Field-assisted bonding of a machinable ceramic to silicon and metals
Ingår i Sensors and materials, s. 65-72, 1988.
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Fracture testing of silicon microelements in situ in a scanning electron microscope
Ingår i Journal of Applied Physics, 1988.
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Influence of bonded area ratio on the strength of FAB seals between silicon microstructures and glass
Ingår i Sensors and materials, s. 209-221, 1988.
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Influence of silicon-sapphire interface defects on SOS MESFET beavior
Ingår i Solid-State Electronics, s. 1493-1496, 1988.
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Ion assisted selective deposition of thin films
Ingår i Vacuum, s. 621-, 1988.
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Micromechanics and micromachining of semiconductor sensors
Ingår i Acta Polytechnica Scandinavica, s. 65-84, 1988.
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Predicting thin film stoichiometry in reactive sputtering
Ingår i Journal of Applied Physics, s. 887-, 1988.
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Properties of titanium boride films prepared by reactive sputtering
Ingår i Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, s. 1693-, 1988.
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Selective deposition of thin films by substrate argon ion bombardment
Ingår i Thin Solid Films, s. 475-480, 1988.
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An infrered stethoscope for auscultatory monitoring during anaesthesia
Ingår i Acta Anaesthesiologica Scandinavica, s. 91-, 1987.
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Complementary silicon MESFET technology
Ingår i Electronic Letters, s. 205-, 1987.
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Dry etching of n- and p-type polysilicon - a rate control study
Ingår i Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, s. 1600-, 1987.
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Latest results from silicon microstrip detectors with VLSI readout for the Delphi microvertex detector
Ingår i Nuclear Instruments and Methods in Physics Research Section A, s. 65-69, 1987.
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Modelling of reactive sputtering of compound materials
Ingår i Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, s. 202-, 1987.
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Oxide breakdown due to charge accumulation during plasma etching
Ingår i Journal of the Electrochemical Society, s. 3113-, 1987.
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Selective deposition of Ti - an interface study
Ingår i Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, s. 1073-, 1987.
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Smått och snabbt för kommunikation och medicin
Ingår i Elteknik, s. 102-103, 1987.
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Spectroscopic diagnostics of photresist erosion in an aluminium etch plasma
Ingår i Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, s. 2045-2048, 1987.
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Spectroscopy diagnostics of phoresist in an aluminium etch plasma
Ingår i Journal of the Electrochemical Society, 1987.
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A square-to-sinewave converter
Ingår i Electronic engineering, s. 44-, 1986.
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Computer modelling and comparison of different rectifier (MS,MSM,PN) diodes
Ingår i IEEE Transactions on Electron Devices, s. 469-, 1986.
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First results from a silicon-strip detector with VLSI readout
Ingår i Nuclear Instruments and Methods in Physics Research Section A, s. 153-158, 1986.
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Flying-spot scanning for the separate mapping of resistivity and minority-cariier lifetime in silicon
Ingår i Solid-State Electronics, s. 779-786, 1986.
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Formation and characterization of metal-semiconductor junctions
Ingår i Vacuum, s. 659-, 1986.
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Generalized Norde plot including determination of the ideality factor
Ingår i Journal of Applied Physics, 1986.
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Ion assisted selective thin film deposition
Ingår i Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, s. 448-, 1986.
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Ionic thermocurrents in sodium fluoride thin film
Ingår i Solid State Ionics, s. 191-196, 1986.
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Multimode fibre-optic sinsors with frequency output
Ingår i Journal of Optical Sensors, s. 89-93, 1986.
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Parameter sensitivity analysis for computer modelling of metal-semiconductor junctions
Ingår i Solid-State Electronics, s. 613-617, 1986.
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Removal of RSE induced damages in silicon
Ingår i Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, s. 752-, 1986.
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Silicon microcavities fabricated with a new technique
Ingår i Electronic Letters, 1986.
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The use of nitrogen mass flow as deposition rate control in reactive sputtering
Ingår i Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, s. 594-, 1986.
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A p-channel MESFET on silicon using erbium gate
Ingår i Solid-State Electronics, s. 15-, 1985.
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A simple/universal rf-generator module system for use in plasma processing
Ingår i Vacuum, s. 539-, 1985.
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AC and DC superimposed AC conduction in sodium fluoride thin films
Ingår i Physica Status Solidi (a) applications and materials science, s. 755-, 1985.
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CALCULATIONS OF CHARGE DISTRIBUTIONS AND MINORITY-CARRIER INJECTION RATIO FOR HIGH-BARRIER SCHOTTKY DIODES
Ingår i Solid-State Electronics, s. 721-727, 1985.
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Interface circuit between a capacitance meter (PAR 401) and a microcomputer (Apple II)
Ingår i Review of Scientific Instruments, 1985.
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Mass flow limitations in reactive sputtering
Ingår i Thin Solid Films, s. 307-313, 1985.
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Micromachining of three-dimensional silicon structures using photelectrochemical etching
Ingår i Electronic Letters, s. 1207-, 1985.
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Minority-carrier lifetime mapping in silicon using a microprocessor-controlled flying-spot scanner
Ingår i J Phys E: Scientific Instrum, 1985.
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Observation of Diffuse Interference in Reflectance from Oxide-Coated Metals.
Ingår i Thin Solid Films, s. 221-227, 1985.
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Temperature independent Faraday rotation near the band gap in Cd1-xMnxTe
Ingår i Applied Physics Letters, s. 1016-, 1985.
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Temperaturreglering av diffusionspumpar
Ingår i Vakuum Nytt, 1985.
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Titanium silicide films prepared by reactive sputtering
Ingår i Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, s. 723-, 1985.
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Vibration analysis of micromechanical elements
Ingår i Sensors and Actuators A-Physical, s. 235-243, 1985.
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A comparative study of the diffusion barrier properties for TiN and ZrN
Ingår i Thin Solid Films, 1984.
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A self consistent approach to Fowler plots
Ingår i Solid-State Electronics, s. 1029-1032, 1984.
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Fiber-optic systems for temperature and vibration measurements
Ingår i Optics and lasers in engineering, s. 155-172, 1984.
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Halvledarfysik på Texas Instruments Il-59
Ingår i Programbiten, 1984.
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Influence of metal sheet resistivity on the IV-characteristics of metal-semiconductor diodes
Ingår i Solid-State Electronics, s. 317-, 1984.
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Influence of substrate material on the initial thin film growth during ion deposition from a glow discharge
Ingår i Vacuum, s. 969-973, 1984.
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Position-sensitive focal plane detectors for electron (ESCA) spectrometers
Ingår i Nuclear Instruments and Methods in Physics Research Section A, s. 204-, 1984.
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Reactively sputtered ZrN used as A1/si diffusion barrier in a Zr-contact structure to silicon
Ingår i Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, s. 281-, 1984.
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Self limiting etch depth using simultaneous sputter etching/deposition technique
Ingår i Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, s. 470-, 1984.
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The photoelectric response of Schottky diodes
Ingår i Manus, 1984.
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Titanium silicide films prepared by reactive sputtering
Ingår i Journal of Vacuum Science & Technology B, s. 997-, 1984.
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A comparison of AES- and RBS-analysis of the composition of reactively sputtered TiSix-films
Ingår i Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, s. 497-, 1983.
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A mp-controlled flying-spot scanner with an intelligen A/D-converter unit
Ingår i IEEE Transactions on Instrumentation and Measurement, s. 491-496, 1983.
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An instrument for detecting bat and insect sounds
Ingår i Myotis, s. 82-88, 1983.
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Anodic bonding of gallium arsenide to glass
Ingår i Applied Physics Letters, s. 267-269, 1983.
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Arsenic distribution in Ti Si2/polycrystalline silicon bilayers during heat treatment
Ingår i Thin Solid Films, s. 289-, 1983.
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Batch fabrication of micromechanical elements in GaAs-A1xGa1-xAs*
Ingår i Sensors and Actuators A-Physical, s. 341-348, 1983.
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Redistribution of dopants in TiSi2-polycrystalline bilayers during heat treatment
Ingår i Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, s. 463-, 1983.
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Review of semiconductor detectors for nuclear radiation
Ingår i Sensors and Actuators A-Physical, s. 103-117, 1983.
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The 12C(a,a)12C nuclear resonance at 4,26 MeV and its application in RBS analysis of carbon content in thin films
Ingår i Nuclear Instruments and Methods in Physics Research Section A, s. 439-444, 1983.
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TiSi2/TiN - A stable multilayered contact structure for shallow implanted junctions in VLSI-technology
Ingår i Physica Scripta, 1983.
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A circuit for contact monitoring in electrocardiography
Ingår i IEEE Transactions on Biomedical Engineering, 1982.
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A new approach to the determination of MS-barrier heights from photoelectric data and/or an alternative way to determine the value of the Richardson constant
Ingår i Solid-State Electronics, s. 989-, 1982.
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Auger electron spectroscopy studies of the formation of iridium and rodhium silicides
Ingår i Thin Solid Films, s. 361-, 1982.
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Barrier heights to silicon, of ruthenium and its silicide
Ingår i Journal of Applied Physics, s. 5352-, 1982.
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Comparison of annealing and iion implantation effects during solid state disilicide formation
Ingår i Journal of Applied Physics, s. 3067-, 1982.
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Computer modelling of high barrier Schottky diodes applied to study of the accuracy of experimental barrier determination
Ingår i Surface Science, s. 264-267, 1982.
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Junctions between sputter-deposited CdSe and P-type silicon
Ingår i Thin Solid Films, s. 380-, 1982.
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Methods of avoiding edge effects on semiconductor diodes
Ingår i Journal Phys D: Appl Phys, s. 517-536, 1982.
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Parallel plate muyltichannel electron detector with uniform response
Ingår i Physica Scripta, s. 4484-, 1982.
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Properties of tunsten silicide film on polycrystalline silicon
Ingår i Journal of Applied Physics, s. 4866-, 1982.
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Schottky rectifiers on silicon using high barriers
Ingår i Solid-State Electronics, s. 295-297, 1982.
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Silicides of ruthenium and osmium: thin film reactions, diffusion, nucleation, stability
Ingår i Journal of Applied Physics, 1982.
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Simple dipole model for barrier heights of silicide- and metal-silicon barriers
Ingår i Surface Science, s. 336-, 1982.
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Stoichiometry determination of reactively sputtered titanium-silicide
Ingår i Vacuum, s. 665-, 1982.
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The behaviour of B (also As) in bilayers of polysilicon and SWi2
Ingår i Journal of Applied Physics, s. 7372-, 1982.
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A comparison between the diffusion model and the combined diffusion-thermionic-emission model for MS junctions by two-carrier numerical computations
Ingår i Physica Scripta, s. 456-, 1981.
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A new heart-rate measurement instrument
Ingår i Medical Instruments The Annals of Applied Inf Stencils 7, 1981.
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Barrier height of Fe contacts to Si
Ingår i Physica Scripta, s. 408-409, 1981.
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Contact resistance measurements on platinum-silicide and chromium contacts to highly doped n and p silicon
Ingår i Physica Scripta, s. 405-407, 1981.
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Diffusion marker experiments with rare-earth silicides and germanides: relative mobilities of the two atom species
Ingår i Journal of Applied Physics, 1981.
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Ir Si 1.74, a new semiconducting compound
Ingår i Solid state physics (New York. 1955), 1981.
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Junctions between amorphous and crystalline silicon
Ingår i Physica Scripta, s. 339-400, 1981.
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Laser scanning technique for the detection of minority carrier lifetime inhomogeneities in silicon using liquid rectifying contacts
Ingår i Physica Scripta, s. 392-395, 1981.
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Modelling of semiconductor structures and devices
Ingår i Physica Scripta, s. 446-, 1981.
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Noise characterization of avalanche photodiodes with a multichannel pulse height analyzer
Ingår i Physica Scripta, s. 375-, 1981.
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RF sputtering characteristics and power supply coupling conditions
Ingår i Thin Solid Films, s. 255-, 1981.
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Tantalum silicide films deposited by DC sputtering
Ingår i Journal of Electronic Materials, s. 59-, 1981.
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Tantalum silicide thin films obtained by sputtering
Ingår i Journal of Electronic Materials, s. 59-, 1981.
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The Schottky barrier height of the contacts between some rare-earth metals and p-type silicon
Ingår i Applied Physics Letters, 1981.
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A simple and inexpensive method of measuring medium pressure
Ingår i Journal Phys E:Sci Instrum, s. 1050-, 1980.
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An interface marker technique applied to the study of metal-silicide growth
Ingår i Nuclear Instruments and Methods in Physics Research Section A, s. 491-, 1980.
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Application of the langmuir probe in sputtering techniques
Ingår i Journal of the Electrochemical Society, s. 1573-, 1980.
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Barrier height of Re and Os contacts to n-silicon
Ingår i Applied Physics Letters, s. 313-, 1980.
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Electrical defects in silicon introduced by sputtering and sputter-etching
Ingår i Journal of the Electrochemical Society, s. 1573-, 1980.
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Ion backscattering and X-ray investigations of violin varnish and wood
Ingår i Nuclear Instruments and Methods in Physics Research Section A, s. 441-, 1980.
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Laser scanning technique for the detection of resistivity inhomogeneities in silicon using liquid rectifying contacts
Ingår i IEEE Transactions on Electron Devices, 1980.
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Measurement of the rectrifying barrier heights of various rhodium silicides with n-silicon
Ingår i Applied Physics Letters, 1980.
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Nucleation controlled thin film interactions: Silicides
Ingår i Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, s. 471-, 1980.
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Observations of stresses in thin films of palladium and platinum
Ingår i Journal of Vacuum Science & Technology B, 1980.
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Observations on the hexagonal form of MoSi2 and WSi2 films produced by ion implantation and on related snow-plow effects
Ingår i Journal of Applied Physics, 1980.
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Refractory metal silicides formation induced by As+-implantation
Ingår i Applied Physics Letters, s. 295-, 1980.
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The electrical characteristics of RF magnetron and non-magnetron planar systems
Ingår i Vacuum, s. 225-, 1980.
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The formation of silicides from thin films of some rare-earth metals
Ingår i Applied Physics Letters, s. 594-, 1980.
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The thin film formation of rhodium silicides
Ingår i Journal of Applied Physics, s. 373-, 1980.
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A modified forward I-V plot for Schottky diodes with high series resistance
Ingår i Journal of Applied Physics, s. 5072-, 1979.
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Barrier height of evaporated manganese contacts to silicon
Ingår i Journal of Applied Physics, s. 7250-, 1979.
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Diamond-like carbonfilms produced in a butane plasma
Ingår i Thin Solid Films, s. 117-, 1979.
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Electrical properties of junctions between Ge films and monocrystalline silicon
Ingår i Physica Status Solidi (a) applications and materials science, s. 51-, 1979.
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Formation of iridium silicides from Ir thin films on Si substrates
Ingår i Journal of Applied Physics, s. 3357-, 1979.
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Langmuir probe studies of the glow discharge in an RF sputtering system at various frequencies
Ingår i Vacuum, s. 443-, 1979.
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Measurement of the rectifying barrier heights of the various iridium silicides with n-silicon
Ingår i Applied Physics Letters, s. 202-, 1979.
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Nucleation controlled thin film interactions: Three silicides
Ingår i Applied Physics Letters, s. 285-, 1979.
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Properties and coating rates of diamond-like carbon films produced by RF glow discharge of hydrocarbon gases
Ingår i Thin Solid Films, s. 117-, 1979.
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Studies of a parallel plate electron multiplier
Ingår i Journal Phys E:Sci Instrum, 1979.
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The formation of silicides in Mo-W bilayer films on Si substrates: A Marker experiment
Ingår i Journal of Electronic Materials, s. 641-, 1979.
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The growth kinetics and properties of hard and insulating carbonaceous films grown in an RF discharge
Ingår i Thin Solid Films, s. 213-, 1979.
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The parallell-plate electron multiplier
Ingår i Journal Phys E:Sci Instrum, s. 1015-, 1979.
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A correction diagram for the photoelectric measurement of MS barrier heights
Ingår i Physica Scripta, s. 372-, 1978.
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An alterntive marker experiment in the formation of Mo and W silicides
Ingår i Applied Physics Letters, s. 289-, 1978.
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Barrier formation by glow-discharge induced centers on silicon surfaces
Ingår i Physica Scripta, s. 421-, 1978.
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Bästa fotodioden: pin eller lavin?
Ingår i Elteknik med aktuell elektronik, s. 12-, 1978.
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Computer calculations of the photresponse of a diffused silicon pn junction using the Gummel de Mari algorithm
Ingår i Solid-State Electronics, s. 796-, 1978.
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Correlation between Schottky electron and hole currents from a metal contact on chemically etched silicon
Ingår i Solid-State Electronics, s. 919-, 1978.
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Helium ion backscattering analysis employed to study surface damage and contamination of RF sputter etched silicon
Ingår i Physica Scripta, s. 400-, 1978.
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Initial etching in an RF butane plasma
Ingår i Vacuum, s. 449-, 1978.
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Kanalplattan: fotondetektor med framtiden för sig
Ingår i Elteknik med aktuell elektronik, s. 40-, 1978.
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Multidetector array of parallel plate electron multipliers
Ingår i Physica Scripta, s. 364-, 1978.
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Oxygen content and depth profiling in silicon surface technology studied by the 16 0(aa)160 resonance at 3.015 MeV
Ingår i Physica Scripta, s. 410-, 1978.
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Oxygen distribution profiles in this evaporated contacts on single crystal silicon
Ingår i Nuclear Instruments and Methods in Physics Research Section A, s. 285-, 1978.
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Schottky barrier height of iridium silicides
Ingår i Applied Physics Letters, s. 1028-, 1978.
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The caracterization of CdTe and HgI2 crystals and detectors by light spot scanning
Ingår i Nuclear Instruments and Methods in Physics Research Section A, s. 55-, 1978.
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The floating potential of a metal surface under bombardment of ions from a cold cathode grid
Ingår i Vacuum, s. 329-, 1978.
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Variation of PtSi-nSi barrier height with fabrication parameters and characterization of the electrical behaviour of the junction
Ingår i Physica Scripta, s. 410-, 1978.
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Behaviour of amorphous Ge contacts to monocrystalline silicon
Ingår i Vacuum, s. 201-, 1977.
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Electrical characteristics of sputtering - induced defects in n-type silicon
Ingår i Vacuum, 1977.
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Evaluation PtSi front contact to surface barrier detectors
Ingår i Nuclear Instruments and Methods in Physics Research Section A, s. 525-, 1977.
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Fast volume determinationusing a differential capacitance manometer
Ingår i Vacuum, s. 99-, 1977.
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Investigations of metal contacts to amorphous evaporated Ge films
Ingår i Vacuum, s. 193-, 1977.
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Photoscanning of CdTe detectors for investigation of crystal quality and contact behaviour
Ingår i Revue de physique Appliquee Tome, s. 349-, 1977.
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Substrate surface damages by RF sputtering
Ingår i Vacuum, s. 189-, 1977.
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Surface resistance measurement as an aid in controlling the fabrication of silicides
Ingår i Vacuum, s. 209-, 1977.
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Fabrication of short channel MOSFET:s with refractory metal gates using RF sputter etching
Ingår i Solid-State Electronics, s. 17-, 1976.
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The importance of the time scale in radiation detection exemplified by comparing conventional and avalanche semiconductor detectors
Ingår i Physica Scripta, s. 83-, 1976.
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Transient high level majority and minority carrier photocurrents in p-type silicon Schottky barrier diodes II
Ingår i Solid-State Electronics, s. 653-, 1976.
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Transient high level majority and minority carrier photocurrents in p-type silicon Schottky barrier diodes II: comparison with computer calculations
Ingår i Solid-State Electronics, s. 645-, 1976.
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Characterization effort of HgI2 radiation detectors by pulsed laser transient charge injection techniques
Ingår i IEEE Transactions on Nuclear Science, 1975.
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New microtransducer for physiological pressure recordings
Ingår i Medical & Biological Engineering, 1975.
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A study of ion paths in curved parallel plate electron multipliers with perpendicular magnetic field
Ingår i Nuclear Instruments and Methods in Physics Research Section A, s. 509-, 1974.
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Dependence of gain on plate separation in a parallel plate channel multiplier
Ingår i Nuclear Instruments and Methods in Physics Research Section B, s. 539-, 1974.
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Effects of the lateral displacement of the front edges in a parallel plate channel multiplier
Ingår i Nuclear Instruments and Methods in Physics Research Section A, s. 233-, 1974.
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Electrolytic catheter-tip pressure transducer
Ingår i Medical & Biological Engineering, s. 355-, 1974.
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Investigations of the elemental composition of violin finish and wood composition by ion backscattering
Ingår i The Catgut Acoustical Society Newsletter, 1974.
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Minority carrier injection and resistance moulation in silicon surface barrier diodes
Ingår i Nuclear Instruments and Methods in Physics Research Section B, s. 237-, 1974.
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On the initial value of transient photcurrents in silicon
Ingår i Solid-State Electronics, s. 996-, 1974.
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Pulse shape in a parallel plate electron multiplier free from ion feedback
Ingår i Nuclear Instruments and Methods in Physics Research Section A, s. 245-, 1974.
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Reverse diode characteristics of evaporated Au on n-silicon diodes
Ingår i Solid-State Electronics, s. 411-, 1974.
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Semiconductor contracts to silicon surface barrier detectors
Ingår i Nuclear Instruments and Methods in Physics Research Section B, s. 537-, 1974.
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Timing and amplitude characteristics of a parallel plate electron multiplier
Ingår i Nuclear Instruments and Methods in Physics Research Section B, s. 345-, 1974.
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Voltage-dependent reverse current in high resistivity silicon surface-barrier diodes
Ingår i Nuclear Instruments and Methods in Physics Research Section A, s. 241-, 1974.
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A study of discontinuous Au films with respect to strain gauge applications
Ingår i Thin Solid Films, s. 113-, 1973.
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Charge collection in silicon detectors for strongly ionising particles
Ingår i Nuclear Instruments and Methods in Physics Research Section B, s. 317-, 1973.
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Comparison of backscattering parameters using high energy oxygen and helium ions.
Ingår i Thin Solid Films, s. 157-, 1973.
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Diode characteristics and edge effects of metal semiconductor diodes
Ingår i Solid-State Electronics, s. 513-, 1973.
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Elementanalys med Rutherfordspridning och dess tillämpning inom elektronikforskningen
Ingår i Kosmos, 1973.
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Mechanism of aluminium contacts in surface barrier detectors
Ingår i Nuclear Instruments and Methods in Physics Research Section A, s. 435-, 1973.
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Stress effect in sputtered metal-semiconductor junctions
Ingår i Physica status solidi. A, Applied research, s. 589-, 1973.
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Studies on the formation of silicides and their barrier heights to silicon
Ingår i Physica status solidi. A, Applied research, s. 653-, 1973.
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Theory of transient photocurrents in totally depleted semiconductors
Ingår i Solid-State Electronics, s. 1017-, 1973.
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Transient space charge limited current in light-pulse excited silicon
Ingår i Solid-State Electronics, s. 961-, 1973.
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Transistorns tillkomst - ett 25-årsminne
Ingår i Kosmos, 1973.
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An electrolytical pressure sensor for bio-medical applications
Ingår i Methods and Instruments in Medical Engineering, 1972.
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Impurity incorporation during RF sputtering of silicon oxide layers
Ingår i Physica status solidi. A, Applied research, 1972.
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Parallel-plate electron multipliers
Ingår i IEEE Transactions on Nuclear Science, s. 85-, 1972.
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Development of parallel plate channel multipliers for use in electron spectroscopy
Ingår i Nuclear Instruments and Methods in Physics Research Section B, s. 301-, 1970.
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Measurement of drift velocity of electrons in silicon by exciting a diode structure with short superradiant laser pulses
Ingår i IEEE Transactions on Electron Devices, s. 407-, 1970.
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Frequency and time analysis of polyphonic music
Ingår i Journal of the Acoustical Society of America, s. 249-, 1967.
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Instantaneous pulsemeasuring voltmeter
Ingår i Electronic engineering, 1967.
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Low-level pulse discriminators with back diodes and tunnel diodes
Ingår i Nuclear Instruments and Methods in Physics Research Section B, s. 249-, 1967.
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Plasma effects in semiconductor detectors
Ingår i Nuclear Instruments and Methods in Physics Research Section B, s. 261-269, 1967.
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Pulse rise times of silicon surface barrier detectors
Ingår i Nuclear Instruments and Methods in Physics Research Section B, s. 304-, 1967.
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An electronic device for automatic precision measurement of polargraphic drop-times on single drops and for recording complete electrocapillary curves
Ingår i Journal of Electroanalytical Chemistry, s. 564-, 1966.
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Direct-recording frequency and amplitude meter for analysis of musical and other sonic waveforms
Ingår i Journal of the Acoustical Society of America, s. 362-, 1966.
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Frekvensmätare med kort inställningstid
Ingår i Elektronik, s. 64-, 1966.
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A cardiotachometer with fast response
Ingår i Medical Electronics and Biological Engineering, s. 57-, 1965.
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Influence of non-constant carrier mobility on the charge transport time in semiconductor detectors
Ingår i Nuclear Instruments and Methods in Physics Research Section B, s. 157-, 1965.
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Några synpunkter på elektronikens utvecklingshistoria
Ingår i Elementa, 1965.
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A fast-slow coincidence matrix system
Ingår i Energia Nucleare, 1964.
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A method of measuring ultra-short nuclear life-times using particle time to energy conversion with an HF voltage and energy selection by solid state detectors
Ingår i Nuclear Instruments and Methods in Physics Research Section B, s. 45-, 1964.
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A new method of measuring gap voltages and parallel resistances of cavities
Ingår i IEEE Transactions on Instrumentation and Measurement, s. 29-, 1964.
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A solid state spectrometer for measuring the distribution of charged particles in aurorae
Ingår i Nuclear Instruments and Methods in Physics Research Section B, s. 66-, 1964.
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Low noise solid state amplifiers for semiconductor detectors
Ingår i Nuclear Instruments and Methods in Physics Research Section A, 1964.
-
Pulse formation and transit time of charge carriers in semiconductor junction detectros
Ingår i Nuclear Instruments and Methods in Physics Research Section B, s. 66-, 1964.
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Pulse period meter with short response time, applied to cardiotachometry
Ingår i Electronic engineering, s. 290-, 1964.
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Spectrum analysis of sonic signals
Ingår i Elteknik, s. 19-, 1964.
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A simple digital time-interval measuring circuit
Ingår i Electrical engineering (Berlin. Print), s. 598-, 1963.
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Treatment of Meniere's disease by ultrasonic irradiation
Ingår i Acta Oto-Laryngologica, 1963.
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Two-transformer DC to AC power convertors
Ingår i Electronic engineering, s. 742-, 1963.
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A light pulse generator for measuring the light response of junction diodes
Ingår i Preprint, 1962.
-
Utvecklingstendensen inom elektroniken
Ingår i Svensk Naturvetenskap, 1962.
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Infrared curtain system detects and counts moving objects
Ingår i Electronics, 1961.
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Scanning microscope for photoelectric data evaluation
Ingår i Review of Scientific Instruments, s. 1343-, 1961.
-
Transit time of charge carriers in the semiconductor ionization chamber
Ingår i Nuclear Instruments and Methods in Physics Research Section B, s. 278-, 1961.
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An oto-micromanipulator
Ingår i Acta oto-laryngologica. Supplementum, s. 304-, 1960.
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An oto-micromanipulator for otological use
Ingår i Acta Oto-Laryngologica, s. 347+-, 1960.
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Halvledarjonkammaren: en ny detektor för radioaktiv strålning
Ingår i Kosmos, s. 139-, 1960.
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Automatic single-channel pulse height analyzer
Ingår i Nuclear Instruments and Methods in Physics Research Section B, s. 1-, 1958.
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Electronic time analyzer applied to the measurement of the halv-lives of metastable nuclear states.
Ingår i Nuclear Instruments and Methods in Physics Research Section B, s. 95-, 1957.
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The isometric transitions in T1 197 and T1 195
Ingår i Nuclear Physics A, s. 493-, 1957.
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Scintillation spectrometry using long light guides
Ingår i Review of Scientific Instruments, s. 143-, 1956.
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Short-lived radio-nuclides by a synchrocyclotoron
Ingår i Physiological Reviews, s. 773-, 1954.
Publikationer
Artiklar i tidskrift (ickegranskade)
-
A flexible 20-channel time-delay and pulse height analyser.: Equipment for pulsed bombardment study of short-lived neclei in a cyclotron
Ingår i Ark för fysik, s. 579-, 1958.
-
Alpha-emitters with short half-life induced by protons on heavy elements
Ingår i Ark för fysik, s. 549-, 1958.
-
Isometric state in Bi 206
Ingår i Ark för fysik, s. 61-, 1957.
Publikationer
Konferensbidrag (granskade)
-
Activation of Sb in Ultra-Shallow poly-silicon emitter using rapid thermal processing
Ingår i Proc. Mat. Res. Soc. Symp., s. 317-322, 1989.
DOI för Activation of Sb in Ultra-Shallow poly-silicon emitter using rapid thermal processing
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Complementary MESFET technology on buk silicon
s. 53- 1988.
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A batch-processed optical scanner
s. 282- 1986.
-
CAD studies of MESFET devices with a modified BAMBI
s. 100- 1986.
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Complementary MESFET's in silicon technology
s. 156- 1986.
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Ion assited thin film growth
s. 12-18 1986.
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High resolution ESCA measurements on Pt silicides
Ingår i IBM Seminar "Thin Films & Interfaces", 1984.
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Multimode fiber-optic accelerometers
s. 191-194 1984.
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Pressure sensor with fluorescence decay as information carrier
s. 391-394 1984.
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Lågnivå-spänningsdiskriminatorer med tunneldioder
s. föredrag C43- 1966.
-
Frekvens- och tidsanalys av två- och flerstämmiga förlopp
s. föredrag C11- 1964.
-
Gallerbarriärrörets användning för signalintegrering och bruseliminering
s. föredrag 46- 1963.
-
Spektralanalys av musikförlopp
s. föredrag 8- 1963.
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Studier över analogiminnen för signalbehandling
s. föredrag C42- 1962.