Scientific articles at Solid-State Electronics 1950-1989

A fast approach for calculations of silicon MESFET characteristics from SUPREM doping profiles

Tirén, J; Nylander, JO; Norde, Herman

Part of Solid-State Electronics, p. 711-716, 1989.

A miniaturized micromachined pressure sensor for biomedical applications

Tenerz, L; Hök, Bertil

Part of Clinical physics and Physiological measurement, 1989.

A self consistent approach of IV measurements on rectifying metal-semiconductor contacts

Donoval, D; de Sousa Pires, Jorge; Tove, PA; Harman, R

Part of Solid-State Electronics, p. 961-964, 1989.

An improved silicon p-channel MESFET with a BF2 implanted thin channel and ErSi1 gate

Tirén, J; Magnusson, U; Rosling, M; Bleichner, H et al.

Part of Solid-State Electronics, p. 993-996, 1989.

Bulk silicon technology for complementary MESFET's

Magnusson, U; Tirén, J; Söderbärg, A; Rosling, M et al.

Part of Electronic Letters, p. 565-566, 1989.

Computer simulations of Schottky contacts with a non-constant recombination velocity

Nylander, JO; Masszi, Ferenc; Selberherr, S; Berg, Sören

Part of Solid-State Electronics, p. 363-367, 1989.

Design of a solid-state gyroscopic sensor made of quartz

Söderkvist, Jan

Part of Sensors and Actuators A-Physical, p. 293-296, 1989.

Fabrication of three-dimensional silicon structures by means of doping-selective etching (DSE)

Lindén, Y; Tenerz, L; Tirén, J; Hök, B

Part of Sensors and Actuators A-Physical, p. 67-82, 1989.

Fiberoptic sensors - a mricromechanical approach

Hök, B; Tenerz, L; Gustafsson, K

Part of Sensors and Actuators A-Physical, p. 157-166, 1989.

Light scanning techniques - a critical survey

Gustafsson, K; Hök, B

Part of International journal of optoelectronics, p. 33-51, 1989.

Micromachining of silicon for thermal and position-sensitive nuclear detector applications

Bäcklund, Ylva; Coron, NJ; Delsing, P; Jonsson, B et al.

Part of Nuclear Instruments and Methods in Physics Research Section A, p. 555-559, 1989.

Modeling of recative sputtering of titanium boride

Larsson, T; Berg, Sören; Blom, Hans-Olof

Part of Thin Solid Films, p. 241-251, 1989.

Passive silicon transensor intended for biomedical remote pressure monitoring

Bäcklund, Ylva; Rosengren, Lars; Hök, Bertil; Svedbergh, Björn

Part of Sensors and Actuators A-Physical, p. 58-61, 1989.

Perpendicular walls fabricated in <100>-oriented silicon by anisotropic wet etching

Tenerz, L; Bäcklund, Ylva; Tirén, J; O'Connel, J

Part of Sensors and materials, p. 313-320, 1989.

Process modelling of reactive sputtering

Berg, Sören; Blom, Hans-Olof; Larsson, T; Moradi, M et al.

Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 1225-1229, 1989.

Process modelling of reactive sputtering

Berg, Sören; Blom, Hans-Olof; Moradi, M; Nender, C et al.

Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 1225-1229, 1989.

Reactive sputtering of titanium boride

Larsson, T; Blom, Hans-Olof; Berg, Sören; Östling, M

Part of Thin Solid Films, p. 133-141, 1989.

Reactively sputtered titanium boride thin films

Blom, Hans-Olof; Larsson, T; Berg, Sören; Östling, M

Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 162-165, 1989.

Silicon etching in a direct current glow discharge of CF4/O2 and NF3/O2

Blom, Hans-Olof; Berg, Sören; Nender, C; Norström, H

Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 1321-1324, 1989.

Si/ti/TiB2/A1 structures investigated as contacts in microelectronic devices

Larsson, T; Wennström, U; Norström, H; Blom, Hans-Olof et al.

Part of Solid-State Electronics, p. 385-389, 1989.

Substrate dependent escape depths of sputtered substrate atoms through thin film overlayers

Berg, Sören; Masszi, Ferenc; Biersack, JP

Part of Thin Solid Films, 1989.

Subthreshold behaviour of silicon MESFET's on SOS and bulk silicon substrates

Magnusson, U; Tirén, J; Norde, Herman; Bleichner, H

Part of Solid-State Electronics, p. 931-934, 1989.

Superhigh-rate plasma jet etching of silicon

Bardos, Ladislav; Berg, Sören; Blom, Hans-Olof

Part of Applied Physics Letters, p. 1615-1617, 1989.

The use of process modelling for optimum design of reactive sputtering processes

Berg, Sören; Moradi, M; Nender, C; Blom, Hans-Olof

Part of Journal of Surface and Coatings Technology, p. 465-474, 1989.

Use of residue arithmetic for resolving ambiguity in phase measruements

Öberg, Tommy

Part of IEEE Transactions on Instrumentation and Measurement, p. 1007-1009, 1989.

A batchfabricated non-reverse valve with cantilever beam manufactured by micromachining of silicon

Tirén, J; Tenerz, L; Hök, B

Part of Sensors and Actuators A-Physical, p. 389-396, 1988.

A novel fiber-optic voltmeter

Gustafsson, K; Hök, B

Part of International journal of optoelectronics, p. 299-309, 1988.

A physical model for eliminating instabilities in reactive sputtering

Larsson, T; Blom, Hans-Olof; Berg, Sören; Nender, C

Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 1832-, 1988.

A silicon light modulator

Gustafsson, K; Hök, B

Part of Journal Phys E:Sci Instrum, p. 680-685, 1988.

Complementary Si MESFET concept using silicon-on-sapphire technology

Tove, PA; Bohlin, K; Masszi, Ferenc; Norde, Herman et al.

Part of IEEE Electron Device Letters, p. 47-49, 1988.

DC-etching of polysilicon with fluorine chemistry

Blom, Hans-Olof; Norström, H; Nender, C; Berg, Sören

Part of Vacuum, p. 813-, 1988.

Determination of the mobility profile in silicon-on-sapphire material using the "FAT"FAT-principle

Söderbärg, A; Rosling, M; Norde, Herman; Tove, PA

Part of Solid-State Electronics, p. 1583-1585, 1988.

Development of a wireless stethoscope for auscultatory

Hök, B; Bythell, V; Bengtsson, M

Part of Medical & Biological Engineering & Computing, p. 317-320, 1988.

Development of a wireless stethoscope for auscultatory monitoring during anaesthesia

Hök, B; Bythell, V; Bengtsson, M

Part of Medical & Biological Engineering & Computing, 1988.

Field-assisted bonding of a machinable ceramic to silicon and metals

Gustafsson, K; Johansson, S; Hök, B; Murray, T

Part of Sensors and materials, p. 65-72, 1988.

Fracture testing of silicon microelements in situ in a scanning electron microscope

Johansson, S; Schweitz, J-Å; Tenerz, L; Tirén, J

Part of Journal of Applied Physics, 1988.

Influence of bonded area ratio on the strength of FAB seals between silicon microstructures and glass

Johansson, S; Gustafsson, K; Schweitz, J-Å

Part of Sensors and materials, p. 209-221, 1988.

Influence of silicon-sapphire interface defects on SOS MESFET beavior

Nylander, JO; Magnusson, U; Rosling, M; Tove, PA

Part of Solid-State Electronics, p. 1493-1496, 1988.

Ion assisted selective deposition of thin films

Berg, Sören; Nender, C; Gelin, B

Part of Vacuum, p. 621-, 1988.

Micromechanics and micromachining of semiconductor sensors

Hök, B

Part of Acta Polytechnica Scandinavica, p. 65-84, 1988.

Predicting thin film stoichiometry in reactive sputtering

Berg, Sören; Larsson, T; Nender, C; Blom, Hans-Olof

Part of Journal of Applied Physics, p. 887-, 1988.

Properties of titanium boride films prepared by reactive sputtering

Blom, Hans-Olof; Larsson, T; Berg, Sören; Östling, M

Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 1693-, 1988.

Selective deposition of thin films by substrate argon ion bombardment

Nender, C; Berg, Sören; Gelin, B

Part of Thin Solid Films, p. 475-480, 1988.

An infrered stethoscope for auscultatory monitoring during anaesthesia

Bythell, V; Bengtsson, M; Hök, B

Part of Acta Anaesthesiologica Scandinavica, p. 91-, 1987.

Complementary silicon MESFET technology

Bohlin, K; Tove, PA; Magnusson, U; Tirén, J

Part of Electronic Letters, p. 205-, 1987.

Dry etching of n- and p-type polysilicon - a rate control study

Nender, C; Berg, Sören; Buchta, R; Norström, H

Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 1600-, 1987.

Latest results from silicon microstrip detectors with VLSI readout for the Delphi microvertex detector

Anzivino, G; Horisberger, R; Hubbeling, L; Hyams, B et al.

Part of Nuclear Instruments and Methods in Physics Research Section A, p. 65-69, 1987.

Modelling of reactive sputtering of compound materials

Berg, Sören; Blom, Hans-Olof; Larsson, T; Nender, C

Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 202-, 1987.

Oxide breakdown due to charge accumulation during plasma etching

Rydén, K-H; Norström, H; Nender, C; Berg, Sören

Part of Journal of the Electrochemical Society, p. 3113-, 1987.

Selective deposition of Ti - an interface study

Nender, C; Berg, Sören; Gelin, B; Stridh, B

Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 1073-, 1987.

Smått och snabbt för kommunikation och medicin

Hök, B

Part of Elteknik, p. 102-103, 1987.

Spectroscopic diagnostics of photresist erosion in an aluminium etch plasma

Krogh, Ole; Slomowitz, Harry; Melaku, Yosias; Blom, Hans-Olof

Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 2045-2048, 1987.

Spectroscopy diagnostics of phoresist in an aluminium etch plasma

Krogh, O; Slomowitz, H; Melaku, Y; Blom, Hans-Olof

Part of Journal of the Electrochemical Society, 1987.

A square-to-sinewave converter

Pettersson, L

Part of Electronic engineering, p. 44-, 1986.

Computer modelling and comparison of different rectifier (MS,MSM,PN) diodes

Masszi, Ferenc; Tove, PA; Bohlin, K; Norde, Herman

Part of IEEE Transactions on Electron Devices, p. 469-, 1986.

First results from a silicon-strip detector with VLSI readout

Anzivino, G; Horisberger, R; Hubbeling, L; Hyams, B et al.

Part of Nuclear Instruments and Methods in Physics Research Section A, p. 153-158, 1986.

Flying-spot scanning for the separate mapping of resistivity and minority-cariier lifetime in silicon

Bleichner, H; Nordlander, E; Fiedler, G; Tove, PA

Part of Solid-State Electronics, p. 779-786, 1986.

Formation and characterization of metal-semiconductor junctions

Tove, PA

Part of Vacuum, p. 659-, 1986.

Generalized Norde plot including determination of the ideality factor

Bohlin, KE

Part of Journal of Applied Physics, 1986.

Ion assisted selective thin film deposition

Berg, Sören; Nender, C; Gelin, B; Östling, M

Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 448-, 1986.

Ionic thermocurrents in sodium fluoride thin film

Babulanam, SM

Part of Solid State Ionics, p. 191-196, 1986.

Multimode fibre-optic sinsors with frequency output

Hök, B; Gerritsen, SJ

Part of Journal of Optical Sensors, p. 89-93, 1986.

Parameter sensitivity analysis for computer modelling of metal-semiconductor junctions

Tarnay, K; Elfsten, B; Masszi, Ferenc; Tove, PA

Part of Solid-State Electronics, p. 613-617, 1986.

Removal of RSE induced damages in silicon

Blom, Hans-Olof; Norström, H; Östling, M; Wiklund, P et al.

Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 752-, 1986.

Silicon microcavities fabricated with a new technique

Tenerz, L; Hök, B

Part of Electronic Letters, 1986.

The use of nitrogen mass flow as deposition rate control in reactive sputtering

Berg, Sören; Larsson, T; Blom, Hans-Olof

Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 594-, 1986.

A p-channel MESFET on silicon using erbium gate

Bohlin, K; Nilsson, HT; Tove, PA

Part of Solid-State Electronics, p. 15-, 1985.

A simple/universal rf-generator module system for use in plasma processing

Eriksson, SÅ; Westman, Anders

Part of Vacuum, p. 539-, 1985.

AC and DC superimposed AC conduction in sodium fluoride thin films

Babulanam, SM

Part of Physica Status Solidi (a) applications and materials science, p. 755-, 1985.

CALCULATIONS OF CHARGE DISTRIBUTIONS AND MINORITY-CARRIER INJECTION RATIO FOR HIGH-BARRIER SCHOTTKY DIODES

Elfsten, B; Tove, PA

Part of Solid-State Electronics, p. 721-727, 1985.

Interface circuit between a capacitance meter (PAR 401) and a microcomputer (Apple II)

Bohlin, K

Part of Review of Scientific Instruments, 1985.

Mass flow limitations in reactive sputtering

Blom, Hans-Olof; Berg, Sören; Larsson, T

Part of Thin Solid Films, p. 307-313, 1985.

Micromachining of three-dimensional silicon structures using photelectrochemical etching

Tenerz, L; Hök, B

Part of Electronic Letters, p. 1207-, 1985.

Minority-carrier lifetime mapping in silicon using a microprocessor-controlled flying-spot scanner

Nordlander, E; Drugge, B; Tapia, M

Part of J Phys E: Scientific Instrum, 1985.

Observation of Diffuse Interference in Reflectance from Oxide-Coated Metals.

Roos, Arne; Bergkvist, Mikael; Ribbing, Carl-Gustav

Part of Thin Solid Films, p. 221-227, 1985.

Temperature independent Faraday rotation near the band gap in Cd1-xMnxTe

Kullendorff, N; Hök, B

Part of Applied Physics Letters, p. 1016-, 1985.

Temperaturreglering av diffusionspumpar

Nender, C

Part of Vakuum Nytt, 1985.

Titanium silicide films prepared by reactive sputtering

Blom, Hans-Olof; Berg, Sören; Östling, M; Petersson, CS et al.

Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 723-, 1985.

Vibration analysis of micromechanical elements

Hök, B; Gustafsson, K

Part of Sensors and Actuators A-Physical, p. 235-243, 1985.

A comparative study of the diffusion barrier properties for TiN and ZrN

Blom, Hans-Olof; Norström, H; Östling, m; Nygren, S et al.

Part of Thin Solid Films, 1984.

A self consistent approach to Fowler plots

de Sousa Pires, Jorge; Tove, PA; Donoval, D

Part of Solid-State Electronics, p. 1029-1032, 1984.

An attempt of standardization of the constants involved in semiconductor calculations

de Sousa Pires, Jorge; Donoval, D

Part of Manus, 1984.

Fiber-optic systems for temperature and vibration measurements

Ovrén, C; Adolfsson, M; Hök, B

Part of Optics and lasers in engineering, p. 155-172, 1984.

Halvledarfysik på Texas Instruments Il-59

de Sousa Pires, Jorge

Part of Programbiten, 1984.

Influence of metal sheet resistivity on the IV-characteristics of metal-semiconductor diodes

Elfsten, B; Norde, Herman; Tove, PA

Part of Solid-State Electronics, p. 317-, 1984.

Influence of substrate material on the initial thin film growth during ion deposition from a glow discharge

Berg, Sören; Gelin, B; Svärdström, Anders; Babulanam, SM

Part of Vacuum, p. 969-973, 1984.

Position-sensitive focal plane detectors for electron (ESCA) spectrometers

Asplund, L; Gelius, U; Tove, PA; Eriksson, SÅ et al.

Part of Nuclear Instruments and Methods in Physics Research Section A, p. 204-, 1984.

Reactively sputtered ZrN used as A1/si diffusion barrier in a Zr-contact structure to silicon

Östling, M; Blom, Hans-Olof; Nygren, S; Berg, Sören et al.

Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 281-, 1984.

Self limiting etch depth using simultaneous sputter etching/deposition technique

Berg, Sören; Gelin, B; Östling, M; Babulanam, SM

Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 470-, 1984.

"SEMICON", a program for general semiconductor calculations and analysis of experimental photoelectric and IV data

de Sousa Pires, Jorge; Donoval, D

Part of Manus, 1984.

The determination of the effective carrier lifetime by means of photoelectric and IV measurements

Donoval, D; de Sousa Pires, Jorge; Tove, PA; Harman, R

Part of Manus, 1984.

The photoelectric response of Schottky diodes

Donoval, D; Babulanam, MS; de Sousa Pires, Jorge; Tove, PA

Part of Manus, 1984.

Titanium silicide films prepared by reactive sputtering

Blom, Hans-Olof; Berg, Sören; Östling, M; Petersson, CS et al.

Part of Journal of Vacuum Science & Technology B, p. 997-, 1984.

A comparison of AES- and RBS-analysis of the composition of reactively sputtered TiSix-films

Blom, Hans-Olof; Stridh, B; Berg, Sören

Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 497-, 1983.

A mp-controlled flying-spot scanner with an intelligen A/D-converter unit

Tapia, M; Nordlander, E; Drugge, B

Part of IEEE Transactions on Instrumentation and Measurement, p. 491-496, 1983.

An instrument for detecting bat and insect sounds

Ahlén, I; Pettersson, L; Svärdström, Anders

Part of Myotis, p. 82-88, 1983.

Anodic bonding of gallium arsenide to glass

Hök, B; Dubon, C; Ovrén, Chr

Part of Applied Physics Letters, p. 267-269, 1983.

Arsenic distribution in Ti Si2/polycrystalline silicon bilayers during heat treatment

Östling, M; Petersson, CS; Chatfield, C; Norström, H et al.

Part of Thin Solid Films, p. 289-, 1983.

Batch fabrication of micromechanical elements in GaAs-A1xGa1-xAs*

Hök, B; Ovrén, C; Gustafsson, E

Part of Sensors and Actuators A-Physical, p. 341-348, 1983.

Redistribution of dopants in TiSi2-polycrystalline bilayers during heat treatment

Norström, H; Runovic, F; Buchta, R; Wiklund, P et al.

Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 463-, 1983.

Review of semiconductor detectors for nuclear radiation

Tove, PA

Part of Sensors and Actuators A-Physical, p. 103-117, 1983.

The 12C(a,a)12C nuclear resonance at 4,26 MeV and its application in RBS analysis of carbon content in thin films

Östling, M; Petersson, CS; Possnert, Göran

Part of Nuclear Instruments and Methods in Physics Research Section A, p. 439-444, 1983.

TiSi2/TiN - A stable multilayered contact structure for shallow implanted junctions in VLSI-technology

Norström, H; Donchev, T; Östling, M; Petersson, CS

Part of Physica Scripta, 1983.

A circuit for contact monitoring in electrocardiography

Öberg, Tommy

Part of IEEE Transactions on Biomedical Engineering, 1982.

A new approach to the determination of MS-barrier heights from photoelectric data and/or an alternative way to determine the value of the Richardson constant

de Sousa Pires, Jorge; Donoval, D; Tove, PA

Part of Solid-State Electronics, p. 989-, 1982.

Auger electron spectroscopy studies of the formation of iridium and rodhium silicides

Shapira, Y; Tove, PA; Stolt, Lars; Norde, Herman

Part of Thin Solid Films, p. 361-, 1982.

Barrier heights to silicon, of ruthenium and its silicide

Donoval, D; Stolt, Lars; Norde, Herman; de Sousa Pires, Jorge et al.

Part of Journal of Applied Physics, p. 5352-, 1982.

Comparison of annealing and iion implantation effects during solid state disilicide formation

d'Heurle, F; Petersson, CS; Stritzker, B; Tsai, MY

Part of Journal of Applied Physics, p. 3067-, 1982.

Computer modelling of high barrier Schottky diodes applied to study of the accuracy of experimental barrier determination

Tove, PA

Part of Surface Science, p. 264-267, 1982.

Junctions between sputter-deposited CdSe and P-type silicon

Koshy, J; Ali, MP; Tove, PA

Part of Thin Solid Films, p. 380-, 1982.

Methods of avoiding edge effects on semiconductor diodes

Tove, PA

Part of Journal Phys D: Appl Phys, p. 517-536, 1982.

Parallel plate muyltichannel electron detector with uniform response

Gelin, B

Part of Physica Scripta, p. 4484-, 1982.

Properties of tunsten silicide film on polycrystalline silicon

Tsai, MY; d'Heurle, F; Petersson, CS; Johnsson, RW

Part of Journal of Applied Physics, p. 4866-, 1982.

Schottky rectifiers on silicon using high barriers

Stolt, Lars; Bohlin, K; Tove, PA; Norde, Herman

Part of Solid-State Electronics, p. 295-297, 1982.

Silicides of ruthenium and osmium: thin film reactions, diffusion, nucleation, stability

Petersson, CS; Baglin, J; Dempsey, J; d'Heurle, F et al.

Part of Journal of Applied Physics, 1982.

Simple dipole model for barrier heights of silicide- and metal-silicon barriers

Tove, PA

Part of Surface Science, p. 336-, 1982.

Stoichiometry determination of reactively sputtered titanium-silicide

Blom, Hans-Olof; Berg, Sören; Östling, M; Petersson, S

Part of Vacuum, p. 665-, 1982.

The behaviour of B (also As) in bilayers of polysilicon and SWi2

Jahnel, F; Biersack, J; d'Heurle, F; Fink, D et al.

Part of Journal of Applied Physics, p. 7372-, 1982.

A comparison between the diffusion model and the combined diffusion-thermionic-emission model for MS junctions by two-carrier numerical computations

Masszi, Ferenc; Stolt, Lars; Tove, PA; Tarnay, K

Part of Physica Scripta, p. 456-, 1981.

A new heart-rate measurement instrument

Hoshimiya, N; Tove, PA

Part of Medical Instruments The Annals of Applied Inf Stencils 7, 1981.

Barrier height of Fe contacts to Si

Ali, MP; Tove, PA; Stolt, Lars

Part of Physica Scripta, p. 408-409, 1981.

Contact resistance measurements on platinum-silicide and chromium contacts to highly doped n and p silicon

Boberg, G; Stolt, Lars; Tove, PA; Norde, Herman

Part of Physica Scripta, p. 405-407, 1981.

Diffusion marker experiments with rare-earth silicides and germanides: relative mobilities of the two atom species

Baglin, J; d'Heurle, F; Petersson, CS

Part of Journal of Applied Physics, 1981.

Ir Si 1.74, a new semiconducting compound

Petersson, CS; Reimer, JA; Brodsky, M; Campbell, D et al.

Part of Solid state physics (New York. 1955), 1981.

Junctions between amorphous and crystalline silicon

Ali, MP; Tove, PA; Norde, Herman

Part of Physica Scripta, p. 339-400, 1981.

Laser scanning technique for the detection of minority carrier lifetime inhomogeneities in silicon using liquid rectifying contacts

Drugge, B; Nordlander, E; Edlund, P

Part of Physica Scripta, p. 392-395, 1981.

Modelling of semiconductor structures and devices

Tarnay, K

Part of Physica Scripta, p. 446-, 1981.

Noise characterization of avalanche photodiodes with a multichannel pulse height analyzer

Seibt, Wolfgang; Elfsten, B

Part of Physica Scripta, p. 375-, 1981.

RF sputtering characteristics and power supply coupling conditions

Norström, H; Blom, Hans-Olof

Part of Thin Solid Films, p. 255-, 1981.

Tantalum silicide films deposited by DC sputtering

Angilello, J; Baglin, J; Cardone, F; Dempsey, J et al.

Part of Journal of Electronic Materials, p. 59-, 1981.

Tantalum silicide thin films obtained by sputtering

Dempsey, J; d'Heurle, F; Irene, E; Petersson, CS

Part of Journal of Electronic Materials, p. 59-, 1981.

The Schottky barrier height of the contacts between some rare-earth metals and p-type silicon

Norde, Herman; de Sousa Pires, Jorge; d'Heurle, F; Pesavento, F et al.

Part of Applied Physics Letters, 1981.

A simple and inexpensive method of measuring medium pressure

Norström, H; Olaison, R

Part of Journal Phys E:Sci Instrum, p. 1050-, 1980.

An interface marker technique applied to the study of metal-silicide growth

Baglin, J; d'Heurle, F; Hammer, W; Petersson, CS

Part of Nuclear Instruments and Methods in Physics Research Section A, p. 491-, 1980.

Application of the langmuir probe in sputtering techniques

Norström, H; Olaison, R; Berg, Sören; Andersson, LP

Part of Journal of the Electrochemical Society, p. 1573-, 1980.

Barrier height of Re and Os contacts to n-silicon

Smirnov, A; Tove, PA; de Sousa Pires, Jorge; Norde, Herman

Part of Applied Physics Letters, p. 313-, 1980.

Electrical defects in silicon introduced by sputtering and sputter-etching

Grusell, E; Berg, Sören; Andersson, LP

Part of Journal of the Electrochemical Society, p. 1573-, 1980.

Ion backscattering and X-ray investigations of violin varnish and wood

Tove, PA; Sigurd, D; Petersson, CS

Part of Nuclear Instruments and Methods in Physics Research Section A, p. 441-, 1980.

Laser scanning technique for the detection of resistivity inhomogeneities in silicon using liquid rectifying contacts

Drugge, B; Nordlander, E

Part of IEEE Transactions on Electron Devices, 1980.

Measurement of the rectrifying barrier heights of various rhodium silicides with n-silicon

de Sousa Pires, Jorge; d'Heurle, F; Norde, Herman; Petersson, CS et al.

Part of Applied Physics Letters, 1980.

Nucleation controlled thin film interactions: Silicides

Baglin, J; d'Heurle, F; Petersson, CS

Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 471-, 1980.

Observations of stresses in thin films of palladium and platinum

Angilello, J; d'Heurle, F; Petersson, CS; Segmuller, A

Part of Journal of Vacuum Science & Technology B, 1980.

Observations on the hexagonal form of MoSi2 and WSi2 films produced by ion implantation and on related snow-plow effects

d'Heurle, F; Petersson, CS; Tsai, MY

Part of Journal of Applied Physics, 1980.

Refractory metal silicides formation induced by As+-implantation

Tsai, MY; Petersson, CS; d'Heurle, F; Maniscalco, V

Part of Applied Physics Letters, p. 295-, 1980.

The electrical characteristics of RF magnetron and non-magnetron planar systems

Norström, H

Part of Vacuum, p. 225-, 1980.

The formation of silicides from thin films of some rare-earth metals

Baglin, J; d'Heurle, F; Petersson, CS

Part of Applied Physics Letters, p. 594-, 1980.

The thin film formation of rhodium silicides

Petersson, CS; Andersson, R; Baglin, J; Dempsey, J et al.

Part of Journal of Applied Physics, p. 373-, 1980.

A modified forward I-V plot for Schottky diodes with high series resistance

Norde, Herman

Part of Journal of Applied Physics, p. 5072-, 1979.

Barrier height of evaporated manganese contacts to silicon

Ali, MP; Tove, PA; Ibrahim, M

Part of Journal of Applied Physics, p. 7250-, 1979.

Diamond-like carbonfilms produced in a butane plasma

Berg, Sören; Andersson, LP

Part of Thin Solid Films, p. 117-, 1979.

Electrical properties of junctions between Ge films and monocrystalline silicon

Tove, PA; Ali, MP; Ibrahim, M; Norde, Herman

Part of Physica Status Solidi (a) applications and materials science, p. 51-, 1979.

Experimental and design information for calculating impedance matching networks for use in RF sputtering and plasma chemistry

Norström, H

Part of Vacuum, p. 341-, 1979.

Formation of iridium silicides from Ir thin films on Si substrates

Petersson, CS; Baglin, J; Hammer, W; d'Heurle, F et al.

Part of Journal of Applied Physics, p. 3357-, 1979.

Langmuir probe studies of the glow discharge in an RF sputtering system at various frequencies

Norström, H

Part of Vacuum, p. 443-, 1979.

Measurement of the rectifying barrier heights of the various iridium silicides with n-silicon

de Sousa Pires, Jorge; Ali, MP; Crowder, B; d'Heurle, F et al.

Part of Applied Physics Letters, p. 202-, 1979.

Nucleation controlled thin film interactions: Three silicides

Andersson, R; Baglin, J; Dempsey, J; Hammer, W et al.

Part of Applied Physics Letters, p. 285-, 1979.

Properties and coating rates of diamond-like carbon films produced by RF glow discharge of hydrocarbon gases

Andersson, LP; Berg, Sören; Norström, H; Olaison, R et al.

Part of Thin Solid Films, p. 117-, 1979.

Studies of a parallel plate electron multiplier

Gelin, B; Grusell, E; Andersson, LP; Berg, Sören

Part of Journal Phys E:Sci Instrum, 1979.

The formation of silicides in Mo-W bilayer films on Si substrates: A Marker experiment

Baglin, J; Dempsey, J; Hammer, W; d'Heurle, F et al.

Part of Journal of Electronic Materials, p. 641-, 1979.

The growth kinetics and properties of hard and insulating carbonaceous films grown in an RF discharge

Ojha, SM; Norström, H; McCulluch, D

Part of Thin Solid Films, p. 213-, 1979.

The parallell-plate electron multiplier

Andersson, LP; Grusell, E; Tove, PA

Part of Journal Phys E:Sci Instrum, p. 1015-, 1979.

A correction diagram for the photoelectric measurement of MS barrier heights

de Sousa Pires, Jorge

Part of Physica Scripta, p. 372-, 1978.

An alterntive marker experiment in the formation of Mo and W silicides

Baglin, J; d'Heurle, F; Petersson, CS

Part of Applied Physics Letters, p. 289-, 1978.

Barrier formation by glow-discharge induced centers on silicon surfaces

Norström, H; Grusell, E; Andersson, LP; Berg, Sören

Part of Physica Scripta, p. 421-, 1978.

Bästa fotodioden: pin eller lavin?

Seibt, Wolfgang

Part of Elteknik med aktuell elektronik, p. 12-, 1978.

Computer calculations of the photresponse of a diffused silicon pn junction using the Gummel de Mari algorithm

Janney, R; Hesselbom, H; Tove, PA

Part of Solid-State Electronics, p. 796-, 1978.

Correlation between barrier heights and electron and hole currents from Schottky contacts to silicon radiation detectors and the observation of anomalously low hole currents

Tove, PA

Part of Physica Scripta, p. 417-, 1978.

Correlation between Schottky electron and hole currents from a metal contact on chemically etched silicon

Tove, PA; Ali, MP

Part of Solid-State Electronics, p. 919-, 1978.

Helium ion backscattering analysis employed to study surface damage and contamination of RF sputter etched silicon

Hesselbom, H

Part of Physica Scripta, p. 400-, 1978.

Initial etching in an RF butane plasma

Andersson, LP; Berg, Sören

Part of Vacuum, p. 449-, 1978.

Kanalplattan: fotondetektor med framtiden för sig

Berg, Sören

Part of Elteknik med aktuell elektronik, p. 40-, 1978.

Laser scanning technique for the detection of resistivity and lifetime inhomogeneities in semiconductior devices or photon scanning applied to silicon for determination of bulk properties

Engström, O; Drugge, B; Tove, PA

Part of Physica Scripta, p. 357-, 1978.

Multidetector array of parallel plate electron multipliers

Olaison, R; Gelin, B; Berg, Sören; Andersson, LP

Part of Physica Scripta, p. 364-, 1978.

Oxygen content and depth profiling in silicon surface technology studied by the 16 0(aa)160 resonance at 3.015 MeV

Possnert, Göran; Fahlander, C; Orre, B; Norde, Herman et al.

Part of Physica Scripta, p. 410-, 1978.

Oxygen distribution profiles in this evaporated contacts on single crystal silicon

Petersson, CS; Norde, Herman; Possnert, Göran; Orre, B

Part of Nuclear Instruments and Methods in Physics Research Section A, p. 285-, 1978.

Schottky barrier height of iridium silicides

Ohdomari, I; Tu, KN; d'Heurle, F; Kuan, TS et al.

Part of Applied Physics Letters, p. 1028-, 1978.

The caracterization of CdTe and HgI2 crystals and detectors by light spot scanning

Slapa, M; Tove, PA; Boberg, G

Part of Nuclear Instruments and Methods in Physics Research Section A, p. 55-, 1978.

The floating potential of a metal surface under bombardment of ions from a cold cathode grid

Grusell, E

Part of Vacuum, p. 329-, 1978.

Variation of PtSi-nSi barrier height with fabrication parameters and characterization of the electrical behaviour of the junction

Stolt, Lars; Tove, PA; Petersson, CS

Part of Physica Scripta, p. 410-, 1978.

Behaviour of amorphous Ge contacts to monocrystalline silicon

Norde, Herman; Tove, PA

Part of Vacuum, p. 201-, 1977.

Electrical characteristics of sputtering - induced defects in n-type silicon

Andersson, LP; Evwaraye, AO

Part of Vacuum, 1977.

Evaluation PtSi front contact to surface barrier detectors

Petersson, CS; Mgbenu, E; Norde, Herman; Tove, PA

Part of Nuclear Instruments and Methods in Physics Research Section A, p. 525-, 1977.

Fast volume determinationusing a differential capacitance manometer

Norström, H; Berg, Sören; Andersson, LP

Part of Vacuum, p. 99-, 1977.

Investigations of metal contacts to amorphous evaporated Ge films

Hafiz, M; Mgbenu, E; Tove, PA; Norde, Herman et al.

Part of Vacuum, p. 193-, 1977.

Photoscanning of CdTe detectors for investigation of crystal quality and contact behaviour

Tove, PA; Slapa, M

Part of Revue de physique Appliquee Tome, p. 349-, 1977.

Substrate surface damages by RF sputtering

Berg, Sören; Andersson, LP; Norström, H; Grusell, E

Part of Vacuum, p. 189-, 1977.

Surface resistance measurement as an aid in controlling the fabrication of silicides

Mgbenu, E; Petersson, CS; Tove, PA

Part of Vacuum, p. 209-, 1977.

Fabrication of short channel MOSFET:s with refractory metal gates using RF sputter etching

Rodriguez, A; Misra, M; Hesselbom, H; Tove, PA

Part of Solid-State Electronics, p. 17-, 1976.

The importance of the time scale in radiation detection exemplified by comparing conventional and avalanche semiconductor detectors

Tove, PA; Cho, ZH; Hulth, GC

Part of Physica Scripta, p. 83-, 1976.

Transient high level majority and minority carrier photocurrents in p-type silicon Schottky barrier diodes II

Norde, Herman; Seibt, W; Janney, RB

Part of Solid-State Electronics, p. 653-, 1976.

Transient high level majority and minority carrier photocurrents in p-type silicon Schottky barrier diodes II: comparison with computer calculations

Janney, RB; Seibt, W; Norde, Herman

Part of Solid-State Electronics, p. 645-, 1976.

Characterization effort of HgI2 radiation detectors by pulsed laser transient charge injection techniques

Cho, ZH; Watt, MK; Slapa, M; Tove, PA et al.

Part of IEEE Transactions on Nuclear Science, 1975.

New microtransducer for physiological pressure recordings

Hök, B

Part of Medical & Biological Engineering, 1975.

A study of ion paths in curved parallel plate electron multipliers with perpendicular magnetic field

Janney, RB; Tove, PA

Part of Nuclear Instruments and Methods in Physics Research Section A, p. 509-, 1974.

Dependence of gain on plate separation in a parallel plate channel multiplier

Andersson, LP; Berg, Sören; Hyder, A; Jadrny, J et al.

Part of Nuclear Instruments and Methods in Physics Research Section B, p. 539-, 1974.

Effects of the lateral displacement of the front edges in a parallel plate channel multiplier

Andersson, LP; Berg, Sören

Part of Nuclear Instruments and Methods in Physics Research Section A, p. 233-, 1974.

Electrolytic catheter-tip pressure transducer

Hök, B

Part of Medical & Biological Engineering, p. 355-, 1974.

Investigations of the elemental composition of violin finish and wood composition by ion backscattering

Tove, PA; Chu, WK

Part of The Catgut Acoustical Society Newsletter, 1974.

Minority carrier injection and resistance moulation in silicon surface barrier diodes

Andersson, LP; Hyder, A; Berg, Sören

Part of Nuclear Instruments and Methods in Physics Research Section B, p. 237-, 1974.

On the initial value of transient photcurrents in silicon

Norde, Herman; Seibt, W

Part of Solid-State Electronics, p. 996-, 1974.

Pulse shape in a parallel plate electron multiplier free from ion feedback

Berg, Sören; Andersson, LP

Part of Nuclear Instruments and Methods in Physics Research Section A, p. 245-, 1974.

Reverse diode characteristics of evaporated Au on n-silicon diodes

Tove, PA; Susila, G; Hyder, A

Part of Solid-State Electronics, p. 411-, 1974.

Semiconductor contracts to silicon surface barrier detectors

Andersson, LP; Hyder, A; Misra, M

Part of Nuclear Instruments and Methods in Physics Research Section B, p. 537-, 1974.

Timing and amplitude characteristics of a parallel plate electron multiplier

Berg, Sören; Eriksson, B

Part of Nuclear Instruments and Methods in Physics Research Section B, p. 345-, 1974.

Voltage-dependent reverse current in high resistivity silicon surface-barrier diodes

Berg, Sören; Andersson, LP

Part of Nuclear Instruments and Methods in Physics Research Section A, p. 241-, 1974.

A study of discontinuous Au films with respect to strain gauge applications

Hök, B; Nyholm, R; Groth, Ö; Tove, PA

Part of Thin Solid Films, p. 113-, 1973.

Charge collection in silicon detectors for strongly ionising particles

Seibt, W; Sundström, Karl-Erik; Tove, PA

Part of Nuclear Instruments and Methods in Physics Research Section B, p. 317-, 1973.

Comparison of backscattering parameters using high energy oxygen and helium ions.

Petersson, CS; Tove, PA; Meyer, I; Sundquist, Bo et al.

Part of Thin Solid Films, p. 157-, 1973.

Diode characteristics and edge effects of metal semiconductor diodes

Tove, PA; Hyder, SA; Susila, C

Part of Solid-State Electronics, p. 513-, 1973.

Elementanalys med Rutherfordspridning och dess tillämpning inom elektronikforskningen

Tove, PA; Petersson, CS; Sundquist, Bo

Part of Kosmos, 1973.

Mechanism of aluminium contacts in surface barrier detectors

Andersson, LP; Berg, Sören

Part of Nuclear Instruments and Methods in Physics Research Section A, p. 435-, 1973.

Stress effect in sputtered metal-semiconductor junctions

Groth, Ö; Hök, B; Tove, PA

Part of Physica status solidi. A, Applied research, p. 589-, 1973.

Studies on the formation of silicides and their barrier heights to silicon

Sundström, Karl-Erik; Petersson, CS; Tove, PA

Part of Physica status solidi. A, Applied research, p. 653-, 1973.

Theory of transient photocurrents in totally depleted semiconductors

Seibt, W

Part of Solid-State Electronics, p. 1017-, 1973.

Transient space charge limited current in light-pulse excited silicon

Tove, PA; Andersson, LG

Part of Solid-State Electronics, p. 961-, 1973.

Transistorns tillkomst - ett 25-årsminne

Tarnay, K

Part of Kosmos, 1973.

An electrolytical pressure sensor for bio-medical applications

Hök, B; Groth, Ö

Part of Methods and Instruments in Medical Engineering, 1972.

Impurity incorporation during RF sputtering of silicon oxide layers

Petersson, CS; Linker, GA; Meyer, O

Part of Physica status solidi. A, Applied research, 1972.

Parallel-plate electron multipliers

Tove, PA; Berg, Sören; Andersson, LP; Eriksson, B et al.

Part of IEEE Transactions on Nuclear Science, p. 85-, 1972.

Development of parallel plate channel multipliers for use in electron spectroscopy

Nilsson, Ö; Hasselgren, L; Siegbahn, Kai; Berg, Sören et al.

Part of Nuclear Instruments and Methods in Physics Research Section B, p. 301-, 1970.

Measurement of drift velocity of electrons in silicon by exciting a diode structure with short superradiant laser pulses

Tove, PA; Andersson, G; Eriksson, G; Lidholt, G

Part of IEEE Transactions on Electron Devices, p. 407-, 1970.

Frequency and time analysis of polyphonic music

Tove, PA; Ejdesjö, Lars; Svärdström, Anders

Part of Journal of the Acoustical Society of America, p. 249-, 1967.

Instantaneous pulsemeasuring voltmeter

Westman, Anders; Westerlund, S; Berglund, S

Part of Electronic engineering, 1967.

Low-level pulse discriminators with back diodes and tunnel diodes

Tove, PA; Petrusson, E; Cho, ZH

Part of Nuclear Instruments and Methods in Physics Research Section B, p. 249-, 1967.

Plasma effects in semiconductor detectors

Tove, PA; Seibt, W

Part of Nuclear Instruments and Methods in Physics Research Section B, p. 261-269, 1967.

Pulse rise times of silicon surface barrier detectors

Tove, PA; Seibt, W; Leitz, W

Part of Nuclear Instruments and Methods in Physics Research Section B, p. 304-, 1967.

An electronic device for automatic precision measurement of polargraphic drop-times on single drops and for recording complete electrocapillary curves

Nygård, B; Johansson, E; Olofsson, J

Part of Journal of Electroanalytical Chemistry, p. 564-, 1966.

Direct-recording frequency and amplitude meter for analysis of musical and other sonic waveforms

Tove, PA; Norman, Bjarne; Isaksson, L; Czekajewski, J

Part of Journal of the Acoustical Society of America, p. 362-, 1966.

Frekvensmätare med kort inställningstid

Tove, PA; Norman, Bjarne; Isaksson, L; Czekajewski, J

Part of Elektronik, p. 64-, 1966.

A cardiotachometer with fast response

Czekajewski, J; Tove, PA

Part of Medical Electronics and Biological Engineering, p. 57-, 1965.

Influence of non-constant carrier mobility on the charge transport time in semiconductor detectors

Falk, K; Tove, PA; Madakbas, M

Part of Nuclear Instruments and Methods in Physics Research Section B, p. 157-, 1965.

Några synpunkter på elektronikens utvecklingshistoria

Tove, PA

Part of Elementa, 1965.

A fast-slow coincidence matrix system

Caini, C; Tove, PA

Part of Energia Nucleare, 1964.

A method of measuring ultra-short nuclear life-times using particle time to energy conversion with an HF voltage and energy selection by solid state detectors

Tove, PA; Jonasson, LG

Part of Nuclear Instruments and Methods in Physics Research Section B, p. 45-, 1964.

A new method of measuring gap voltages and parallel resistances of cavities

Tove, PA; Jonasson, LG

Part of IEEE Transactions on Instrumentation and Measurement, p. 29-, 1964.

A solid state spectrometer for measuring the distribution of charged particles in aurorae

Czekajewski, J; Tove, PA; Grabowski, Z

Part of Nuclear Instruments and Methods in Physics Research Section B, p. 66-, 1964.

Low noise solid state amplifiers for semiconductor detectors

Jonasson, L

Part of Nuclear Instruments and Methods in Physics Research Section A, 1964.

Pulse formation and transit time of charge carriers in semiconductor junction detectros

Tove, PA; Falk, K

Part of Nuclear Instruments and Methods in Physics Research Section B, p. 66-, 1964.

Pulse period meter with short response time, applied to cardiotachometry

Tove, PA; Czekajewski, J

Part of Electronic engineering, p. 290-, 1964.

Spectrum analysis of sonic signals

Tove, PA; Pelc, K

Part of Elteknik, p. 19-, 1964.

A simple digital time-interval measuring circuit

Eriksson, G; Tove, PA

Part of Electrical engineering (Berlin. Print), p. 598-, 1963.

Treatment of Meniere's disease by ultrasonic irradiation

Sjöberg, A; Stahle, J; Johnson, S; Sahl, R

Part of Acta Oto-Laryngologica, 1963.

Two-transformer DC to AC power convertors

Pelc, K; Tove, PA

Part of Electronic engineering, p. 742-, 1963.

A light pulse generator for measuring the light response of junction diodes

Tove, PA; Pelc, K

Part of Preprint, 1962.

Utvecklingstendensen inom elektroniken

Tove, PA

Part of Svensk Naturvetenskap, 1962.

Infrared curtain system detects and counts moving objects

Tove, PA; Czekajewski, J

Part of Electronics, 1961.

Scanning microscope for photoelectric data evaluation

Tove, PA; Brolin, S

Part of Review of Scientific Instruments, p. 1343-, 1961.

Transit time of charge carriers in the semiconductor ionization chamber

Tove, PA; Falk, J

Part of Nuclear Instruments and Methods in Physics Research Section B, p. 278-, 1961.

An oto-micromanipulator

Nylén, CO; Erikson, L; Herberts, G; Södergren, V et al.

Part of Acta oto-laryngologica. Supplementum, p. 304-, 1960.

An oto-micromanipulator for otological use

Nylén, CO; Erikson, L; Herberts, G; Södergren, V et al.

Part of Acta Oto-Laryngologica, p. 347+-, 1960.

Halvledarjonkammaren: en ny detektor för radioaktiv strålning

Tove, PA

Part of Kosmos, p. 139-, 1960.

Automatic single-channel pulse height analyzer

Tove, PA

Part of Nuclear Instruments and Methods in Physics Research Section B, p. 1-, 1958.

Electronic time analyzer applied to the measurement of the halv-lives of metastable nuclear states.

Tove, PA

Part of Nuclear Instruments and Methods in Physics Research Section B, p. 95-, 1957.

The isometric transitions in T1 197 and T1 195

Andersson, G; Tove, PA; Jung, B; Svensson, IB

Part of Nuclear Physics A, p. 493-, 1957.

Scintillation spectrometry using long light guides

Tove, P A

Part of Review of Scientific Instruments, p. 143-, 1956.

Short-lived radio-nuclides by a synchrocyclotoron

Tyrén, H; Tove, PA

Part of Physiological Reviews, p. 773-, 1954.

A flexible 20-channel time-delay and pulse height analyser.: Equipment for pulsed bombardment study of short-lived neclei in a cyclotron

Tove, PA

Part of Ark för fysik, p. 579-, 1958.

Alpha-emitters with short half-life induced by protons on heavy elements

Tove, PA

Part of Ark för fysik, p. 549-, 1958.

Isometric state in Bi 206

Arbman, E; Tove, PA

Part of Ark för fysik, p. 61-, 1957.

Activation of Sb in Ultra-Shallow poly-silicon emitter using rapid thermal processing

Grelsson, Örjan; Söderbärg, Anders; Magnusson, Ulf; Olsson, Jörgen et al.

Part of Proc. Mat. Res. Soc. Symp., p. 317-322, 1989.

DOI for Activation of Sb in Ultra-Shallow poly-silicon emitter using rapid thermal processing

Dynamic modelling of the process control of reactive sputtering

Moradi, M; Nender, C; Blom, Hans-Olof; Berg, Sören

1989.

Fabrication of BESOI-materials using implanted nitragen as an effective etch stop barrier

Söderbärg, A

1989.

On the formation of non-metallic protective layers during sliding wear of coated cutting tool materials

Olsson, M; Rosengren, L; Hedenqvist, P

1989.

Patterning of silicon wafers using the plasma jet dry etching technique

Barklund, AM; Blom, Hans-Olof; Berg, Sören; Bardos, Ladislav

1989.

Patterning with the use of ion assisted selective deposition

Gelin, B; Nender, C; Barklund, M; Berg, Sören

1989.

Robust detection applied to phase modulated signals

Öberg, Tommy

1989.

Simulations of multicomponent sputtering

Nender, C; Gelin, B; Berg, Sören

1989.

Submillimeter-sized pressure sensors - design, fabrication, applications

Hök, B

1989.

2D-simulation of metal-semiconductor contracts using a current dependent carrier velocity distribution

Nylander, JO; Kausel, W; Nanz, G; Selberherr, S

1988.

A current dependent recombination velocity model for Schottky contacts

Nylander, JO; Masszi, Ferenc; Norde, Herman; Tove, PA

1988.

A study of the transconductance in MES-transistors on bulk silicon

Bleichner, H; Tirén, J; Rosling, M; Magnusson, U

1988.

Complementary MESFET technology on buk silicon

Tirén, J; Bleichner, H; Rosling, M; Magnusson, U

p. 53- 1988.

Dependence of etching roughness on molarity temperature and surface preparation for Si in aqueous KOH

Palik, ED; Glembocki, OJ; Heard Jr, I; Burno, PS et al.

1988.

Determination of the mobility profile in silicon-on-sapphire-material using a FET transistor

Söderbärg, A; Rosling, M; Norde, Herman

1988.

Development of micromachined transensor for monitoring of intraocular pressure

Lindén, Y; Hök, B; Ejdesjö, Lars; Tenerz, L et al.

1988.

Electrical properties and thermal stability of Si/ti/TiB1/A1 contacts applied to microelectronic fabrication

Larsson, T; Wennström, U; Norström, H; Blom, Hans-Olof et al.

1988.

Etching of poly-silicon with a DC-discharge

Blom, Hans-Olof; Norström, H; Nender, C; Berg, Sören

1988.

Guidewire-mounted sensor for biomedical pressure measurements

Tenerz, L; Hök, B

p. 404- 1988.

Laser-Doppler stethoscope for loadfree recording of skin vibration

Hök, B; Öberg, Å

p. 403- 1988.

Low temperature bonding of a machinable ceramic to silicon and metals

Gustafsson, K; Johansson, S; Hök, B; Murray, T

1988.

Measurements of the leakage current in polysilicon-monosilicon diodes

Grelsson, Ö; Tirén, J; Magnusson, U; Norde, Herman et al.

1988.

Novel three-dimensional silicon structures fabricated by anisotropic etching

Tenerz, L; Lindén, Y; O'Connel, J; Lindberg, U et al.

1988.

Optical characterization of the carrier distribution in a gate turn-off thyristor

Bleichner, H; Vobecky, J; Nordlander, E

1988.

Radiation effects on silicon MESFET's

Rosling, M; Tirén, J; Bleichner, H; Magnusson, U et al.

1988.

Subthreshold behaviour of silicon MESFET's on SOS and bulk silicon

Magnusson, U; Nylander, J; Rosling, M; Tirén, J

1988.

The influence of gate-metallization potential drop on transient GTO characteristics

Bleichner, H; Vobecky, J; Nordlander, E; Vojdani, F et al.

1988.

Three-dimensional LED structures in GaAs for high-efficient light emission

Lindén, Y; Hök, B; Tenerz, L; Janzén, E et al.

1988.

0.5 mm diameter fiber-optic pressure sensor for urodynamic applications

Viktor, A; Larsson, G; Engström, T; Hök, B et al.

1987.

0.5 mm diameter pressure sensor for biomedical applications

Tenerz, L; Hök, B; Engström, T

1987.

Combined numerical/large-signal modelling applied to SOS MESFET devices

Nylander, JO; Masszi, Ferenc; Tove, PA

1987.

Complementary MESFET structures on silicon-on-sapphire

Tirén, J; Söderbärg, A; Bohlin, KE; Tove, PA et al.

1987.

Complementary silicon MESFET's (CMES) using silicon-on-sapphire (SOS) technology

Tove, PA; Bohlin, KE; Masszi, Ferenc; Norde, Herman et al.

1987.

Fiberoptic switching and multiplexing with a micromechanical scanning mirror

Gustafsson, K; Hök, B

1987.

Silicon IC technology using complementary MESFET's

Tove, PA; Bohlin, KE; Norde, Herman; Magnusson, U et al.

1987.

A batch-processed optical scanner

Hök, B; Gustafsson, K

p. 282- 1986.

A combined numerical/larg-signal modelling of SOS MESFET devices

Nylander, JO; Masszi, Ferenc; Tove, PA

1986.

A comparison of different methods for removal of damage caused by reactive sputter etching of silicon

Östling, M; Norström, H; Blom, Hans-Olof; Buchta, R et al.

p. 116- 1986.

A concise modelling concept of M-S junctions for computer-aided design

Masszi, Ferenc; Tove, PA; Bohlin, K; Norde, Herman et al.

p. 103- 1986.

A large-signal SOS MESFET model for nonlinear circuit analysis

Masszi, Ferenc; Nylander, JO; Magnusson, U; Tove, PA

p. 95- 1986.

A position sensitive LSI detector for low energy (ESCA) electrons

Tirén, J; Magnusson, U; Bohlin, K; Tove, PA

p. 265- 1986.

An inexpensive system for signal analysis especially designed for educational purposes

Eriksson, SÅ; Svärdström, Anders

1986.

CAD studies of MESFET devices with a modified BAMBI

Masszi, Ferenc; Masszi, Nóra; Bohlin, K; Nylander, JO et al.

p. 100- 1986.

Complementary MESFET's for VLSI applications

Magnusson, U; Bohlin, KE; Tirén, J; Tove, PA et al.

1986.

Complementary MESFET's in silicon technology

Tove, PA; Bohlin, K

p. 156- 1986.

Development and process control of a metal gate CMOS process

Bohlin, K; Magnusson, U; Tirén, J

p. 68- 1986.

Development of a coevaporation system using a quadruple mass spectrometer

Magnusson, U; Bohlin, KE

p. 376- 1986.

Interface studies of selectively sputter deposited thin films on processed Si-wafers

Nender, C; Berg, Sören; Gelin, B; Stridh, B

p. 313- 1986.

Ion assited thin film growth

Berg, Sören; Nender, C; Gelin, B

p. 12-18 1986.

Oxide breakdown as a result of acharge accumulation during plasma etching

Rydén, K-H; Norström, H; Nender, C; Berg, Sören

p. 120- 1986.

Polysilicon etching in a parallel plate plasma reactor at different frequencies

Nender, C; Berg, Sören; Buchta, R; Norström, H

p. 150- 1986.

Resistance modulation in schottky barrier diodes

Norde, Herman; Bohlin, K; Masszi, Ferenc; Tove, PA

1986.

Silicon cavity structures fabricated with a new technique

Hök, B; Tenerz, L

p. 286- 1986.

Silicon micromachining applied to fiber-optic pressure sensors

Tenerz, L; Hök, B; Norelius, F

1986.

Complementary Si MESFET concept for logic circuits

Bohlin, K; Tove, PA

1985.

Multichannel fiberoptic scanner

Linge, A; Hök, B; Thorén, E

1985.

Oxidation of Au-Si alloy films

Hewett, CA; Bohlin, KE; Randolph, MW; Lau, SS

1985.

A comparison of A1/si diffusion barriers based on TiN or ZrN

Östling, M; Norström, H; Blom, Hans-Olof; Nygren, S et al.

1984.

A complementary Si MESFET concept for fast logic circuits

Bohlin, K; Tove, PA; Norde, Herman

1984.

A model for non-linear initial film growth during ion bombardment

Berg, Sören; Babulanam, SM; Svärdström, Anders

1984.

Breakdown mechanism in semiconductors

Tove, PA

1984.

High resolution ESCA measurements on Pt silicides

Gelius, U; Tove, PA; Asplund, L; Helenlund, Kurt et al.

Part of IBM Seminar "Thin Films & Interfaces", 1984.

Laser scanning of silicon wafers for mapping of carrier lifetime variation

Nordlander, E; Tove, PA

1984.

Multimode fiber-optic accelerometers

Jonsson, L; Hök, B

p. 191-194 1984.

Pressure sensor with fluorescence decay as information carrier

Hök, B; Jonsson, L

p. 391-394 1984.

Properties of reactively sputtered titanium silicide

Blom, Hans-Olof; Berg, Sören; Östling, M; Petersson, CS et al.

1984.

Reverse recovery studies of high barrier Schottky diodes on silicon

Norde, Herman; Bohlin, K

1984.

Selective sputter etching/deposition by non-reactive gases

Berg, Sören; Gelin, b; Babulanam, SM; Nender, C et al.

1984.

Self consistency in semiconductor measurements

de Sousa Pires, Jorge; Donoval, D; Tove, PA

1984.

Sreactive sputtering of ZrN for contacts to IC-circuits

Blom, Hans-Olof; Berg, Sören; Larsson, T

1984.

Nonlinear tunneling barriers at high frequencies and their possible logic processing function in biological membrane

Huth, GC; Bond, JD; Tove, PA

1983.

RBS analysis of A1xGa1-xAs layers using 30 MeV 16O ions

Östling, M; Petersson, CS

1983.

Mobility and trapping time measurements in HgI2

Kusmiss, JH; Iwanczyk, JS; Barton, JB; Dabrowski, AJ et al.

1982.

RBS-analysis of carbon content in thin films using the (a,a) nuclear resonance at 4,26 MeV

Östling, M; Petersson, CS; Possnert, Göran

1982.

Adhesion properties of carbon films

Alnaimi, A; Berg, Sören

1980.

Optical absorption edges in hydrogenated i-carbon films

Olaison, R; Norström, H; Carlsson, B; Berg, Sören et al.

1980.

Reduction of glow discharge induced centers on silicon surfaces in a hydrogen/argon plasma

Blom, Hans-Olof; Norström, H; Berg, Sören

1980.

Laser scanning technique for the investigation of power devices

Engström, OE; Drugge, B; Tove, PA

1979.

Stresses in silicides formed by the interaction of metal films with silicon substrates

Angilello, J; Baglin, J; d'Heurle, F; Petersson, CS

1979.

Studies of sputtering of monoatomic overlayers applied to ion assited thin film processing

Berg, Sören; Nender, C; Masszi, Ferenc; Tvarozek, V et al.

1979.

Substrate sputtering during plasma-deposition of diamond-like carbon films

Norström, H; Olaison, R; Andersson, LP; Berg, Sören

1979.

Position  sensitive electron muliplier detector

Gelin, B; Olaison, R; Berg, Sören; Andersson, LP

1978.

Användning av backspridningsanalys med tunga joner för studium av stökiometrien hos förstoftade skikt av sammansatta halvledare

de Sousa Pires, Jorge; Petersson, CS; Tove, PA; Hesselbom, H

1975.

Backspridningsanalys somhjälpmedel inom tunnfilm och halvledarelektronik

Petersson, CS; Hesselbom, H; de Sousa Pires, Jorge; Tove, PA

1975.

Channel multiplier structures by sputtering

Tove, PA; Berg, Sören; Andersson, LP; Hyder, A

1970.

Properties of ohmic and rectifying Schottky barriers fabricated by sputtering

Tove, PA; Berg, Sören; Andersson, LP; Hyder, A

1970.

An above elbow prothesis with EMG-controlled prehension

Hierton, T; Oldberg, B; Meyer, KH; Hedberg, Å et al.

1967.

EMG-controlled muscle vibrators to aid mobility in spastic paresis

Hedberg, Å; Oldberg, B; Tove, PA

1967.

HF sensing of detector pulses

Tove, PA

1967.

Metod för spektralanalys av tonfrekventa signaler med kontinuerlig registrering av amplitud, frekvens och tidsrelationer

Tove, PA; Svärdström, Anders

1967.

Plasma effects in semiconductor detectors

Tove, PA; Seibt, W

1967.

Lågnivå-spänningsdiskriminatorer med tunneldioder

Tove, PA; Petrusson, E; Cho, ZH

p. föredrag C43- 1966.

Frekvens- och tidsanalys av två- och flerstämmiga förlopp

Tove, PA; Ejdesjö, Lars; Svärdström, Anders

p. föredrag C11- 1964.

Gallerbarriärrörets användning för signalintegrering och bruseliminering

Tove, PA

p. föredrag 46- 1963.

Spektralanalys av musikförlopp

Tove, PA

p. föredrag 8- 1963.

Studier över analogiminnen för signalbehandling

Tove, PA; Pelc, K; Petrusson, E; Westman, Anders et al.

p. föredrag C42- 1962.

Användning av högfrekvent spänning för noggrann tidsbestämning av radioaktiv partikelstrålning.

Tove, PA; Jonsson, SJ

p. föredrag 6- 1960.