Scientific articles at Solid-State Electronics 1990-1999
Find here the scientific articles from the Division of Solid-State Electronics during the period between 1990 and 1999 according to our DIVA catalogue:
Publications
Articles in journal (refereed)
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Compositional variations of sputter deposited Ti/W barrier layers on substrates with pronounced surface topography
Part of THIN SOLID FILMS, p. 227-232, 1999.
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Decreasing the optical path length in an optoelectronic module using silicon micromachining
Part of JOURNAL OF MICROMECHANICS AND MICROENGINEERING, p. 127-129, 1999.
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Designed abrasive diamond surfaces
Part of WEAR, p. 387-394, 1999.
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Diamond microstructures for optical micro electromechanical systems
Part of SENSORS AND ACTUATORS A-PHYSICAL, p. 41-47, 1999.
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Diamond replicas from microstructured silicon masters
Part of SENSORS AND ACTUATORS A-PHYSICAL, p. 24-29, 1999.
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Effect of gas and cathode material on the r.f. hollow cathode reactive PVD
Part of SURFACE & COATINGS TECHNOLOGY, p. 704-708, 1999.
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Effect of impurities in the CdS buffer layer on the performance of the Cu(In,Ga)Se-2 thin film solar cell
Part of JOURNAL OF APPLIED PHYSICS, p. 6858-6865, 1999.
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High precision crystallographic alignment of InP(100)
Part of Electrochemical and solid-state letters, p. 407-408, 1999.
DOI for High precision crystallographic alignment of InP(100)
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Ion assisted deposition of Zn-Mg coatings by unbalanced magnetron sputtering
Part of Surface and Coatings Technology, p. 751-754, 1999.
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Laser beam induced current characterization of high efficiency chalcopyrite solar cells
Part of SOLID STATE PHENOMENA, p. 69-74, 1999.
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Low cost micromachined mirrors for display systems
Part of Journal of Micromechanics and Microengineering, p. 85-88, 1999.
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Measurement of low-frequency base and collector current noise and coherence in SiGe heterojunction bipolar transistors using transimpedance amplifiers
Part of IEEE Transactions on Electron Devices, p. 993-1000, 1999.
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Modelling of fibre holding elements in silicon
Part of JOURNAL OF MICROMECHANICS AND MICROENGINEERING, p. 277-282, 1999.
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Na incorporation in Mo and CuInSe2 from production processes
Part of SOLAR ENERGY MATERIALS AND SOLAR CELLS, p. 255-264, 1999.
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Optoelectronic images of polycrystalline thin-film solar cells based on CuInSe2 and CuInGaSe2 obtained by laser scanning
Part of SEMICONDUCTORS, p. 1037-1039, 1999.
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Preferential sputtering effects in thin film processing
Part of JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, p. 1916-1925, 1999.
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Part of Journal of the Electrochemical society, p. 1104-1105, 1999.
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Quartz-to-quartz direct bonding
Part of Journal of the Electrochemical Society, p. 1104-1105, 1999.
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Residual stress in sputtered gold films on quartz measured by the cantilever beam deflection technique
Part of IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, p. 981-992, 1999.
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Target compound layer formation during reactive sputtering
Part of JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, p. 1827-1831, 1999.
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The behaviour of Na implanted into Mo thin films during annealing
Part of SOLAR ENERGY MATERIALS AND SOLAR CELLS, p. 199-208, 1999.
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The chemical bath deposited CdS/Cu(In,Ga)Se-2 interface as revealed by X-ray photoelectron spectroscopy
Part of JOURNAL OF THE ELECTROCHEMICAL SOCIETY, p. 1816-1823, 1999.
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A lateral symmetrically bistable buckled beam
Part of Journal of Micromechanics and Microengineering, p. 29-32, 1998.
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An analytical analysis of a compressed bistable buckled beam
Part of SENSORS AND ACTUATORS A-PHYSICAL, p. 212-216, 1998.
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Composition control by current modulation in dc-reactive sputtering
Part of JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, p. 1868-1872, 1998.
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Computer modeling as a tool to predict deposition rate and film composition in the reactive sputtering process
Part of JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, p. 1277-1285, 1998.
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Etch rates of crystallographic planes in Z-cut quartz - experiments and simulation
Part of JOURNAL OF MICROMECHANICS AND MICROENGINEERING, p. 1-6, 1998.
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Features of a nonequilibrium microwave electrode discharge
Part of PLASMA PHYSICS REPORTS, p. 891-895, 1998.
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Modeling of the deposition of stoichiometric Al2O3 using nonarcing direct current magnetron sputtering
Part of J Vac Sci Technol A, p. 1286-1292, 1998.
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Passive and fixed alignment of devices using flexible silicon elements formed by selective etching
Part of Journal of Micromechanics and Microengineering, p. 39-44, 1998.
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Selective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas: Angular dependence of SiO2 and Si3N4 etching rates
Part of J Vac Sci Technol, p. 3281-, 1998.
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Spherical Microwave Electrode Discharge. Phenomenology and results of probe measurements
Part of Technical Physics, p. 1428-, 1998.
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Temperature and injection dependence of the Shockley-Read-Hall lifetime in electron-irradiated p-type silicon
Part of JOURNAL OF APPLIED PHYSICS, p. 4206-4212, 1998.
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A high-resolution X-ray photoelectron spectroscopy study of
Part of Jap J Appl Phys, p. 2167-2175, 1997.
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A production process of silicon sensor elements for a fibre optic pressure sensor
Part of Sensors and Actuators A-Physical, 1997.
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A production process of silicon sensor elements for a fibre-optic pressure sensor
Part of Sensors and Actuators, A, p. 69-74, 1997.
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Angular dependence of the polysilicon etch rate during dry etching in SF6 and Cl-2
Part of JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, p. 686-691, 1997.
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Bulk silicon holding structures for mounting of optical fibres in v-grooves
Part of J Microelectromech Syst, p. 35-40, 1997.
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Characterization of the linear arc discharge (LAD) source for film deposition
Part of SURFACE & COATINGS TECHNOLOGY, p. 578-582, 1997.
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Determination of charge carrier collecting regions in chalcopyrite heterojunction solar cells by electron-beam-induced current measurements
Part of SOLAR ENERGY MATERIALS AND SOLAR CELLS, p. 299-309, 1997.
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Diamond deposition from halogenated methane precursors on Si and SiC substrates
Part of Diamond and Related Materials, p. 85-88, 1997.
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Diamond deposition in a microwave electrode discharge at reduced pressures
Part of DIAMOND AND RELATED MATERIALS, p. 224-229, 1997.
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Discharge disruptions in a helicon plasma source
Part of J Vac Sci Technol A, p. 2864-2874, 1997.
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Electrical investigation of the silicon/diamond interface
Part of Microelectronic Engineering, p. 245-248, 1997.
DOI for Electrical investigation of the silicon/diamond interface
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Improved lifetime characteristics in heavy ion irradiated silicon
Part of NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, p. 410-413, 1997.
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In situ diagnostic studies of reactive co-sputtering from two targets by means of soft x-ray and optical emission spectroscopy
Part of JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, p. 145-148, 1997.
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Linear arc discharge (LAD): A new type of hollow cathode plasma cource
Part of Surface & Coatings Technology, p. 377-380, 1997.
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Linear arc discharge source for large area plasma processing
Part of Appl Phys Lett, p. 577-579, 1997.
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Micromechanics in optical microsystems - with focus on telecom systems
Part of JOURNAL OF MICROMECHANICS AND MICROENGINEERING, p. 93-98, 1997.
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Physical models in device simulation of SI power pindiodes for optimal fitting of simulation results to measured data
Part of Compel, p. 144-156, 1997.
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Preferential Sputtering Effects in the Deposition of TiAl Films by Filtered Cathodic Arc Deposition
Part of Nucl Instr Phys Res B, p. 207-209, 1997.
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Studies of reactive sputtering of multi-phase chromium nitride
Part of JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, p. 248-252, 1997.
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Temperature dependent electron beam induced current experiments on chalcopyrite thin film solar cells
Part of APPLIED PHYSICS LETTERS, p. 1011-1013, 1997.
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The ambipolar Auger coefficient: Measured temperature dependeble in electron irradiated and highly injected n-type silicon
Part of J Appl Phys, p. 2256-2262, 1997.
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Thin film processing by the radio frequency hollow cathodes
Part of SURFACE & COATINGS TECHNOLOGY, p. 723-728, 1997.
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A Method for the Determination of the Angular Dependence during Dry Etching
Part of Journal of Vacuum Science & Technology B, p. 3239-, 1996.
DOI for A Method for the Determination of the Angular Dependence during Dry Etching
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A non-contacting sensor system for respiratory air flow detection
Part of Sensors & Actuators, p. 81-85, 1996.
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Compensation Doping of Polysilicon Films for Stable Integrated Circuit Resistors
Part of Solid State Phenomena, p. 561-566, 1996.
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Electrical characterisation of silicon pn-junctions terminated with diamond
Part of Diamond and Related Materials, p. 1457-1461, 1996.
DOI for Electrical characterisation of silicon pn-junctions terminated with diamond
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Electrostatically excited diaphragm driven as a loudspeaker
Part of Sensors & Actuators, p. 211-215, 1996.
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Enhanced enzyme activity in silicon integrated enzyme reactors utilizing porous silicon as the copuling matrix
Part of Sensors & Actuators, p. 161-166, 1996.
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Impurities in chemical bath deposited CdS films for Cu(In,Ga)Se-2 solar cells and their stability
Part of JOURNAL OF THE ELECTROCHEMICAL SOCIETY, p. 2662-2669, 1996.
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Lifetime in proton irradiated silicon
Part of JOURNAL OF APPLIED PHYSICS, p. 3906-3914, 1996.
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Limitations to the piezoelectric effect for materials with finite resistivity
Part of Sensors & Actuators, p. 690-694, 1996.
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Linear arc discharge (LAD): A new type of hollow cathode plasma source
Part of SURFACE & COATINGS TECHNOLOGY, p. 377-380, 1996.
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Microwave surfatron system for plasma processing
Part of JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, p. 474-477, 1996.
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Modification of silicon surfaces with H2SO4:H2O2:HF and HNO3:HF for wafer bonding applications
Part of JOURNAL OF THE ELECTROCHEMICAL SOCIETY, p. 1709-1714, 1996.
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Oxygen in Solution Grown Cds Films for Thin Film Solar Cells
Part of Solid State Phenomena, p. 533-540, 1996.
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Precise mask alignment to the crystallographic orientation of silicon wafers using wet anisotropic etching
Part of J Micromech Microeng, p. 279-284, 1996.
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Radio frequency hollow cathodes for the plasma processing technology
Part of SURFACE & COATINGS TECHNOLOGY, p. 648-656, 1996.
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Reliability Evaluation of Manufacturing Processes for Bipolar and MOS Devices on Silicon-On-Diamond Materials
Part of J Electrochem Soc, p. 1326-1334, 1996.
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Resputtering effects during ion beam assisted deposition and the sputter yield amplification effect
Part of Surface & Coatings Technology, p. 353-362, 1996.
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Simulation of forward bias injection in proton irradiated silicon pn-junctions
Part of Solid-State Electronics, p. 1087-1092, 1996.
DOI for Simulation of forward bias injection in proton irradiated silicon pn-junctions
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Temperature and injection dependence of the Shockley-Read-Hall lifetime in electron irradiated n-type silicon
Part of J Appl Phys, p. 9142-9148, 1996.
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Terracing of (100) Si with one mask and one etching step using misaligned V-grooves
Part of Journal of Micromechanics and Microengineering, p. 39-42, 1996.
DOI for Terracing of (100) Si with one mask and one etching step using misaligned V-grooves
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The radio frequency hollow cathode plasma jet arc for the film deposition
Part of JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, p. 3033-3038, 1996.
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A bioacoustic method for timing of respiration at cardiac investigation
Part of Clinical Physiology, p. 151-157, 1995.
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A new method for film deposition in the discharge of target metal vapour
Part of Surface and Coatings Technology, p. 174-180, 1995.
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Abnormal High Rate Deposition of TiN Films by the Radio Frequency Plasma Jet System
Part of J Electrochem Soc, p. 883-887, 1995.
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Controlled topography production - True 3D simulation and experiment
Part of Vacuum, p. 971-975, 1995.
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Fabrication of 45 Mirrors Together with Well-Defined V-Grooves Using Wet Anisotropic Etching of Silicon
Part of Journal of microelectromechanical systems, p. 213-219, 1995.
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High Current Gain Hybrid Lateral Bipolar Operation of DMOS Transistors
Part of IEEE Transactions on Electron Devices, p. 1628-1635, 1995.
DOI for High Current Gain Hybrid Lateral Bipolar Operation of DMOS Transistors
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Hysteresis effects in the sputtering process using two reactive gases
Part of Thin Solid Films, p. 181-186, 1995.
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Improved Direct Bonding of Si- and SiO2 surfaces by Cleaning in H2SO4:H2O2:HF
Part of Appl. Phys. Lett, p. 650-652, 1995.
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Ionized dopant concentrations in silicon - an analytical approach
Part of Solid-State Electronics, p. 2059-2061, 1995.
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Metastable assisted deposition of TiN films
Part of Appl Phys Lett, p. 1521-1523, 1995.
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Modeling of Mass Transport and Gas Kinetics of the Reactive Sputtering Process
Part of Journal de Physique IV, Colloque C5, suppl au de Jorurnal de Physique II, 5, p. C5/45-C5/54, 1995.
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Optically trapped non-linear particles as probes for scanning near-field optical microscope
Part of Ultramicroscopy, p. 309-312, 1995.
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Respiratory monitoring during postoperative analgesia
Part of J Clin Monit, p. 365-372, 1995.
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Silicon wafer integrated enzyme reactors
Part of Biosensors & Bioelectronics, p. 289-299, 1995.
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Synergistic sputtering effects during ion bombardment with two ion species
Part of J Vac Sci Technol, p. 831-833, 1995.
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The effect of emitter shortings on turn-off limitations and device failure in GTO thyristors under snubberless operation
Part of IEEE Trans on Electron Devices, p. 178-187, 1995.
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The effects of HF-cleaning prior to silicon wafer bonding
Part of Journal of the Electrochemical Society, p. 1297-1303, 1995.
DOI for The effects of HF-cleaning prior to silicon wafer bonding
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Titanium nitride deposited by high rate rf hollow cathode plasma jet reactive process
Part of VACUUM, p. 1433-1438, 1995.
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Transient Measurements of Heat Distribution in Devices Fabricated on Silicon-On Diamond Material
Part of Japanese Journal of Applied Physics, p. 4706-4714, 1995.
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Vacancy related defect profiles in MeV cluster-ion irradiated silicon
Part of Nuclear Instruments and Methods in Physics Research Section B, p. 233-236, 1995.
DOI for Vacancy related defect profiles in MeV cluster-ion irradiated silicon
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2-D characterization of dynamic charge distribution in MOS controlled thyristors: Experiment and simulation
Part of IEEE Electron Device Letters, p. 221-223, 1994.
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A micro machined enzyme reactor in <100>-oriented silicon
Part of Sensors and Actuators A-Physical, p. 55-58, 1994.
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A study of design influence on anode-shorted GTO thyristor turn-on and turn-off
Part of IEEE transactions on power electronics, p. 514-521, 1994.
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A system for passive implantable pressure sensors
Part of Sensors and Actuators A-Physical, p. 55-58, 1994.
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Assembling three-dimensional microstructures using gold-silicon eutectic bonding
Part of Sensors and Actuators A-Physical, p. 227-236, 1994.
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Buried cobalt silicide slyers in silicon created by wafer bonding
Part of Journal of the Electrochemical Society, p. 2829-2833, 1994.
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Characterization of an inchworm prototype motor
Part of Sensors and Actuators A-Physical, p. 322-329, 1994.
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Characterization of spontaneously bonded hydrophobic silicon surfaces
Part of Journal of the Electrochemical Society, p. 562-566, 1994.
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Continuous ink-jet print head utilizing silicon micromachined nozzles
Part of Sensors and Actuators A-Physical, p. 311-316, 1994.
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Deposition of carbonaceous films onto internal walls of tubes
Part of Journal of the Electrochemical Society, p. 374-377, 1994.
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Effect of the space charge sheath on properties of carbon and diamond films grown in the radio frequency plasma jet
Part of Diamond and related materials, p. 528-530, 1994.
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Effect of the space charge sheath on properties of carbon and diamond films grown in the radio sheath on properties of carbon and diamond films grown in the radio frequency plasma jet
Part of Diamond and related materials, p. 528-530, 1994.
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Enhancement of the reactive deposition rate of TiN films at low nitrogen content
Part of Journal of the Electrochemical Society, 1994.
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Evaluation of local lifetime in proton irradiated silicon
Part of Journal of Applied Physics, 1994.
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Gallium arsenide as a mechanical material
Part of Journal of Micromechanics and Microengineering, p. 1-13, 1994.
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Large area selective thin film deposition by bias sputtering
Part of Thin Solid Films, p. 1-8, 1994.
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Measurements of failure phenomena ininductively loaded multi-cathode GTO thyristors
Part of IEEE Transactions on Electron Devices, p. 251-257, 1994.
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Microloading effect in reactive etching
Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 1962-1965, 1994.
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Micromachined gyroscopes
Part of Sensors and Actuators A-Physical, p. 65-71, 1994.
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Micromachined optical planes and reflectors in silicon
Part of Sensors and Actuators A-Physical, p. 330-333, 1994.
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Micro-MOS - a first principle based 3D Monte Carlo simulation program for sub-half micron SI MOSFET:s
Part of Solid-State Electronics, 1994.
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Modelling of bias sputter deposition processes
Part of Surface and Coatings technology, p. 325-331, 1994.
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Numerical and experimental studies of the sputter yield amplification effect
Part of Radiation effects and defects in solids (Print), p. 281-291, 1994.
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Preferential sputtering of silicon from metal silicides at elevated temperatures
Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 1542-1546, 1994.
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Pressure microsensor system using a closed-loop configuration
Part of Sensors and Actuators A-Physical, p. 7881-, 1994.
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The ambipolar diffusion coefficient in silicon: Dependence on excess-carrier concentration and temperature
Part of Journal of Applied Physics, p. 2855-2859, 1994.
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The Piezoelectric effect of GaAs used for resonant sensors and actuators
Part of Journal of Micromechanics and Microengineering, p. 28-34, 1994.
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The piezoelectric effect of GaAs used for resonators and resonant sensors
Part of Journal of Micromechanics and Microengineering, p. 28-34, 1994.
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The stady state in net erosion and net growth regimes during simultaneous ion bombardment and atomicdeposition processes
Part of Radiation effects and defects in solids (Print), p. 315-333, 1994.
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Theoretical Models for the Action Spectrum and the Current-Voltage Characteristics of Microporous Semiconductor Films in Photoelectrochemical Cells
Part of The Journal of Physical Chemistry C, p. 5552-5556, 1994.
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Three-dimensional simulation of surface evolution during growth and erosion
Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 61-68, 1994.
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X-ray reflection, a technique for measuring sputtering yields of thin film
Part of Nuclear Instruments and Methods in Physics Research Section B:: Beam Interactions with Materials and Atoms, p. 395-403, 1994.
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A new respiratory rate monitor: development and initial clinical experience
Part of International Journal of Clinical Monitoring and Computing, p. 101-107, 1993.
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A Self-Aligned Lateral Bipolar Transistor Concept Realized on SIMOX-material
Part of IEEE Transactions on Electron Devices, p. 2359-2360, 1993.
DOI for A Self-Aligned Lateral Bipolar Transistor Concept Realized on SIMOX-material
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A time-dependent two-dimensional analysis of the turn-off process in a gate turn-off thyristor (GTO)
Part of IEEE Transactions on Electron Devices, p. 2352-2358, 1993.
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An r.f. plasma jet applied to diamond, glassy carbon and silicon carbide film synthesis
Part of Diamond and related materials, p. 517-522, 1993.
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Anisotropic etching of Z-cut quartz
Part of Journal of Micromechanics and Microengineering, p. 65-73, 1993.
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Characteristics of quasi-buckling
Part of Sensors and materials, 1993.
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Characterization of a prototype active joint for micro-robotics driven by piezoelectric bimorphs
Part of Sensors and Actuators A-Physical, 1993.
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Characterization of spontaneously bonded hydrophobic silicon surfaces
Part of Journal of the Electrochemical Society, 1993.
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Continuous ink jet print head utilizing silicon micromachined nozzles
Part of Sensors and Actuators A-Physical, 1993.
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Electro-chemical etch stop obtained by accumulation of free carriers without pn junction
Part of Journal of the Electrochemical Society, p. 271-275, 1993.
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Evaluation and interpretation 3D Monte Carlo simulation results of submcron MOS transistors
Part of Journal of Communications, p. 22-31, 1993.
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Evaluation of carrier lifetime in power semiconductors using both optical and electrical measurements supported by two-dimensional computer simulation
Part of Journal of Communications, p. 14-22, 1993.
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Experimental evaluation of two new sensors for respiratory rate monitoring
Part of Physiological Measurement, p. 171-181, 1993.
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Flexural vibrations in piezoelectric semi-insulating GaAs
Part of Sensors and Actuators A-Physical, p. 133-139, 1993.
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Flexural vibrations in piezoelectric semi-insulating GaAs
Part of Sensors and Actuators A-Physical, 1993.
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High bias sputtering for large area selective deposition
Part of Thin Solid Films, p. 87-90, 1993.
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Influence of different etching mechanisms on the angular dependence of silicon nitride etching
Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 1226-1229, 1993.
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Ion-assisted selective deposition of aluminium for via-hole interconnections
Part of Vacuum, p. 197-201, 1993.
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Micromachined gyroscopes
Part of Sensors and Actuators A-Physical, 1993.
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Post-anesthesia monitoring revisited: Incidence of true and alse alarms from different monitoring devices.
Part of Journal of clinical anesthesia, 1993.
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Pressure microsensor system using a closed-loop configuration
Part of Sensors and Actuators A-Physical, 1993.
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Quasi-buckling of micromachined beams
Part of Journal of Micromechanics and Microengineering, 1993.
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Radio frequency plasma jet applied to boating of internal walls of narrow tubes
Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 1486-1490, 1993.
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Radio frequency plasma jet applied to coating of internal walls of narrow tubes
Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 1486-1490, 1993.
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Reactive deposition of diamond and Si carbide films by hydrogen plasma etching of graphite and Si in rf plasma jet
Part of Thin Solid Films, p. 218-222, 1993.
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Self aligned micromachined ink jet nozzles
Part of Transducers, p. 246-249, 1993.
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Serial cosputtering of metals: Modelling of sputtering from a periodically codeposited surface
Part of Surface and Coatings Technology, p. 287-292, 1993.
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Serial cosputtering of some metal alloys: Enhancement of partial sputtering yields of light metals
Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 314-318, 1993.
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Similarities betwen piezoelectric, thermal and other internal means of exciting vibrations
Part of Journal of Micromechanics and Microengineering, p. 24-31, 1993.
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Spontaneous bonding of hyydrophobic silicon surfaces
Part of Applied Physics Letters, p. 1362-1364, 1993.
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Studies of the optical emission from a hydrogen-hydrocarbon rf plasma jet stream during diamond film deposition
Part of Diamond and related materials, p. 347-352, 1993.
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The evolution of atomic scale topography by sputtering erosion
Part of Surface and Interface Analysis, p. 90-94, 1993.
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The theory of ion beam polishing and machining
Part of Vacuum, p. 303-309, 1993.
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Very High Current Gain Enhancement by Substrate Biasing of Lateral Bipolar Transistors on Thin SOI
Part of Microelectronic Engineering, p. 379-382, 1993.
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A novel technique for the simulataneous measurement of ambipolar carrier lifetime and diffusion coefficient in silicon
Part of Solid-State Electronics, p. 1223-1227, 1992.
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A study of turn-off limitations and failur mechanisms in GTO thyristors by means of 2-D time-resolved optical measurements
Part of Solid-State Electronics, p. 1683-1695, 1992.
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A suggested mechanism for silicon direct bonding from studying hydrophilic and hydrophobic surfaces
Part of Journal of Micromechanics and Microengineering, p. 158-160, 1992.
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A system for wireless intraocular pressure measurements using a silicon micromachined sensor
Part of Journal of Micromechanics and Microengineering, p. 202-204, 1992.
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Activation and detection of mechanical vibrations in piezoelectric beams
Part of Sensors and Actuators A-Physical, p. 567-571, 1992.
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Active joints for microrobot limbs
Part of Journal of Micromechanics and Microengineering, p. 221-223, 1992.
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Atom assisted sputtering yield amplification
Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 1592-1596, 1992.
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Bond-strenght measurements related to silicon surface hydrophilicity
Part of Journal of the Electrochemical Society, p. 2299-, 1992.
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Deposition and properties of diamond films - a review
Part of VakuumNytt, p. 91-95, 1992.
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Deposition of thin diamond films - a short review
Part of Czechoslovak Journal of Physics, p. 141-150, 1992.
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Enhanced sputtering of one species in the processing of multielement thin films
Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, p. 1765-, 1992.
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Investigation of buried etch stop layer in silicon by nitrogen implantation
Part of Journal of the Electrochemical Society, p. 561-566, 1992.
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Investigation of the Current-Voltage Behavior of a Combined Schottky-p-n diode
Part of Solid-State Electronics, p. 1229-1231, 1992.
DOI for Investigation of the Current-Voltage Behavior of a Combined Schottky-p-n diode
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Low pressure rf plasma jet - a new tool for surface processing
Part of Surface and coatings Technology, p. 91-95, 1992.
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Micro vials on a silicon wafer for sample introduction in capillary electrophoreses
Part of Journal of chromatography. B, 1992.
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Micro vials on a silicon wafer for sample introduction in capillary electrophoresis
Part of Journal of chromatography. B, 1992.
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Micromachined sensor structures with linear capacitive response
Part of Sensors and Actuators A-Physical, p. 200-205, 1992.
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New shapes in (100) Si using KOH and EDP etches
Part of Journal of Micromechanics and Microengineering, p. 75-79, 1992.
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On the impact parameter probability distribution in atomic collisions for Monte Carlo simulations
Part of Nuclear Instruments and Methods in Physics Research Section B, p. 28-32, 1992.
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Post-anesthesia monitoring: More than 75% of pulse oximeter alarms are trivial
Part of Anesthesiology, p. 582-, 1992.
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Sputte erosion amplification
Part of Surface and Coatings Technology, p. 131-135, 1992.
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The IPOP-IOL: A probe into the eye
Part of Acta Ophthalmologica, p. 266-268, 1992.
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Two-dimensional etching diagrams for z-cut quartz
Part of Journal of Micromechanics and Microengineering, p. 215-217, 1992.
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A lateral bipolar transistor concept on SOI using a self-aligned base definition technique
Part of Microelectronic Engineering, p. 341-344, 1991.
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A phenomenological method of predicting the performance of piezoelectric beams
Part of Journal of the Acoustical Society of America, p. 693-699, 1991.
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A phenomenological method of predicting the performance of piezoelectric beams
Part of Journal of Micromechanics and Microengineering, p. 16-24, 1991.
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An optical systm for bilateral recombination-radiation diagnostics of the carrier redistribution in switching power devices
Part of IEEE Transactions on Instrumentation and Measurement, p. 956-961, 1991.
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Bond-strength measurements related to silicon surface hydrophilicity
Part of Electrochemical Society, p. 682-, 1991.
-
Dynamic behavior of a piezoelectric beam
Part of Journal of the Acoustical Society of America, p. 686-692, 1991.
-
Evaluation of boron distributions in amorphous 49BF2+-implanted silicon
Part of Journal of the Electrochemical Society, p. 571-576, 1991.
-
Highly excited states of nitric oxide studied by high-resolution resonance-enhanced multiphoton ionization spectroscopy
Part of Chemical Physics, p. 473-481, 1991.
-
Microphone design for bio-acoustic signals with suppression of noise and artefacts
Part of Sensors and Actuators A-Physical, p. 527-533, 1991.
-
Modeling of multicomponent reactive sputtering
Part of Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, 1991.
-
Piezoelectric beams and vibrating angular rate sensors
Part of IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 1991.
-
Silicon surface damage caused by reactive ion etching in fluorocarbon gas mixtures containing hydrogen
Part of Journal of Vacuum Science & Technology B, p. 34-40, 1991.
-
T-DYN Monte Carlo simulations applied to ion assited thin film processes
Part of Nuclear Instruments and Methods in Physics Research Section A, p. 21-27, 1991.
-
A time-resolved optical system for spatial characterization of the carrier distribution in a gate turn-off thyristor (GTO)
Part of IEEE Transactions on Instrumentation and Measurement, p. 473-478, 1990.
-
A time-resolved optical system for spatial characterization of the distribution in a gate turn-off thyristor (GTO)
Part of IEEE Transactions on Instruments and Measurements, p. 473-478, 1990.
-
An analysis of space-dependent electric fields used in exciting flexural vibrations of piezoelectric beams
Part of Measurements Science and Technology, p. 731-737, 1990.
-
An equivalent circuit description of two coupled vibrations
Part of Journal of the Acoustical Society of America, 1990.
-
an utlrashallow diffused n0p-junction using antimony for device applications
Part of Journal of Applied Physics, p. 7413-7416, 1990.
-
Angular dependence on reactive ion beam etching
Part of Vuoto, p. 467-, 1990.
-
Batch processing of laterally mobile structures in single-crystalline silicon
Part of Sensors and Actuators A-Physical, p. 987-981, 1990.
-
Deep level transient spectroscopy analysis of fast ion tracks in silicon
Part of Journal of Applied Physics, p. 1266-1271, 1990.
-
Design of a solid-state gyroscopic sensor made of quartz
Part of Sensors and Actuators A-Physical, p. 293-296, 1990.
-
Dynamic modeling of the process control of reactive sputtering
Part of Vacuum, p. 1974-1976, 1990.
-
Electric equivalent circuit for flexural vibrations in piezoelectric materials
Part of IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 1990.
-
Investigations of evaporated silicon p-n junctions and their application to junction field-effect transistors
Part of Journal of Applied Physics, p. 2148-2152, 1990.
-
Monte Carlo simulations of ion assisted selective deposition
Part of Thin Solid Films, p. 13-17, 1990.
-
Passive silicon transensor intended for biomedical, remote pressure monitoring
Part of Sensors and Actuators A-Physical, p. 58-61, 1990.
-
Patterning of silicon wafers using the plasma jet dry etching technique
Part of Vacuum, 1990.
-
Patterning with the use of ion assisted selective deposition
Part of Vacuum, p. 1074-1076-, 1990.
-
Precision accelerometers with ug resolution
Part of Sensors and Actuators A-Physical, p. 297-302, 1990.
-
Pressure measurement techniques inurodynamic investigations
Part of Neurourology and Urodynamics, 1990.
-
the very high rate plasma jet dry etching technique
Part of Journal of the Electrochemical Society, p. 1588-1591, 1990.
Publications
Articles in journal (non-refereed)
-
Core level spectroscopy study of N-2 adsorbed on (2x2)K/graphite
Part of SURFACE SCIENCE, p. 118-130, 1998.
-
Probe depth variation in grazing exit soft-X-ray emission spectroscopy
Part of NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, p. 558-562, 1997.
-
The influence of the deposition angle on the composition of reactively sputtered thin films
Part of SURFACE & COATINGS TECHNOLOGY, p. 242-246, 1997.
Publications
Articles in conference (refereed)
-
A Capacitance-Voltage Measurement Method for DMOS Transistor Channel Length Extraction
Part of Proc. of IEEE ICMTS, p. 135-140, 1999.
-
A CMOS Compatible Power MOSFET for Low Voltage GHz Operation
Part of IEEE European Microwave Conf vol 2, p. 21-24, 1999.
-
Analysis and Simulation of Mask Erosion During Etching
Part of American Vacuum Society 46th National Symposium, Seattle, USA, 1999.
-
Baseline Cu(In,Ga)Se2 Device Production: Control and Statistical Significance
Part of 11th International Photovoltaic Science and Engineering Conference, Sapporo, Japan, September 20-24, 1999.
-
Basic Understanding of the Pulsed DC Reactive Sputter Deposition Process
Part of Invited to Second Asian-European Int Conf on Plasma Surface Engineering (AEPSE´99), Beijing, September 15-19, 1999.
-
Damages in oxygen plasma bonding
Part of The 5th Int Symp Semicind Wafer Bond, 196th Electrochem Soc Meeting, Honolulu, Hawaii Abstract no 1001, 1999.
-
Design of Grided Cu(In,Ga)Se2 Thin Film PV Modules
Part of 11th International Photovoltaic Science and Engineering Conference, Sapporo, Japan, September 20-24, 1999.
-
Diamond Membrane Based Miniature X-ray Source
Part of 10th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide, Prague, September 12-17, p. 5.509-, 1999.
-
Direct bonding for true all quartz package and new resonator design
Part of Proc of the 1999 joint meeting of the European frequency and time forum and the 1999 IEEE International Frequency Control Meeting, Becanson, France, 1999.
-
Feasibility Study of a Miniature X-Ray Source Employing Field Emitting Carbon Fibres
Part of Proceedings MME99, Gif sur Yvette, France, p. 140-, 1999.
-
Field emitting structures intended for a miniature x-ray source
Part of Transducers´99, Digest of Technical Papers Vol 1, Sendai, Japan, June 7-10, p. 208-211, 1999.
-
Growth of Cu(In,Ga)Se2 thin films by coevaporation using alkaline precursos
Part of E-MRS Spring Meeting, Strasbourg, France, June 1-4, 1999, 1999.
-
Integration of silicon and diamond, aluminum nitride or aluminum oxide for electronic materials
Part of MRS conference proceedings:III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics. Symposium., 1999.
-
Low Temperature Anodic Bonding of a Sub-Micrometer Fabry-Perot Cavity
Part of Proc Fifth Int Symp on Semiconductor Wafer Bonding: Science, Technology and Applications, Honolulu, 17-22 Oct 1999, pp 1015, p. 1015-, 1999.
-
Space qualification of direct bonded silicon microsystems
Part of Micro Nano Technology for Space Applications, Pasadena, Calif., USA, 1999.
-
Weibull fracture probability for silicon wafer bond evaluation
Part of 5th International Symposium Semicond. Wafer Bonding, Honolulu, 1999.
-
A large micromachined resonant scanning mirror
Part of MSW´98 (Micro Structure Workshop), 25-26 March, Uppsala Sweden, 1998.
-
An empirical high frequency large signal model for high voltage LDMOS transistors
Part of Proceedings of the IEEE European Microwave Conference, Vol.1, p. 733-738, 1998.
-
Atomic layer epitaxy growth of ZnO buffer layers in Cu(In,Ga)Se2 solar cells
Part of Proc 2nd World Conf on Photovoltaic Energy Conversion, Wien July, p. 1145-1148, 1998.
-
Damp Heat Testing of High Performance CIGS Thin Film Solar Cells
Part of Proc 2nd World Conf on Photovoltaic Solar Energy Conversion, p. 1164-1164, 1998.
-
Decreasing the optical path length in optoelectronic module using silicon micromachining
Part of Conf. proc. Micro Mechanics Europe MME'98, 3-5 June, Ulvik, Norway, p. 92-96, 1998.
-
Effect of magnetic field configuration on the performance of hollow cathode linear arc discharge (LAD) source
Part of Int.Conf.Metall.Coat.&Thin Films - ICMCTF-98, San Diego, Paper G.3-7, 1998.
-
Effect of the gas and cathode material on the rf hollow cathode performance
Part of Paper at The 193rd Meet.of the Elecctrochem. Soc., San Diego, May, Ext.abstract 203. Proc. Vol. 98-1.The Electrochem. Soc., Inc, p. 203-, 1998.
-
Integration of diamond and silicon for electronic materials
Part of the MRS fall meeting, Symposium D-Integration of Dissimilar Materials in Micro- and Optoelectronics, Boston, MA, USA, Dec, 1998.
-
Investigation of the Effect of Impurities in Slurries Used for Chemical Mechanical Polishing
Part of The 18th Nordic Semiconductor Meeting, Linköping, Sweden, June 7-10, p. E-70, 1998.
-
Investigation of the etch behaviour around the <111> etch minima
Part of Workshop of Physical Chemistry of Wet Chemical Etching of Silicon, May 17-19, Holten, The Netherlands, 1998.
-
Ion assisted deposition of Zn-Mg coatings by unbalanced magnetron sputtering
Part of Proc of the 6th Int Conf on Plasma Surface Engineering, Garmisch-Partenkirchen, Germany, 1998.
-
Laser beam induced current characterization of high efficiency CIS and CIGS solar cells
Part of Intern. Conf. "POLYSE'98", Schwabish Gmund, Germany 13-18 September, Polycrystalline Semiconductors V - Bulk Materials, Thin Films and Devices in Series "Solid State Phenomena" vol.67-68, Scitech Publ., p. 69-74, 1998.
-
Low cost micromachined mirrors for display systems
Part of MME'98 (Micro Mechanics Europe), June 3-5 1998, Ulvang, Norway, 1998.
-
Micro propulsion thrusters for space applications
Part of MSW´98, Micro Structure Workshop, March 25-26, Uppsala, Sweden, 1998.
-
Miniaturized x-ray source
Part of Proc of the 3rd Micro Structure Workshop, Uppsala March 24-25 (1998) 27.1, 1998.
-
Modeling of Fringe Capacitances in the Oxide and the Depletion Region of a MOS Structure
Part of Proc of the 3rd Micro Structure Workshop, Uppsala March 24-25, 27.1, 1998.
-
Optoelectronic image of polycrystalline thin film solar cells based on CuInSe2 and CuInGaSe2 by the laser beam scan
Part of Intern. Conf. "Physics at the Turn of the 21st Century",St Petersburg, Russia, Sept. 28- Oct. 2, Summaries C20p, p. 98-, 1998.
-
Patterning of Reactively Sputteres Tantalum Pentoxide, a High Epsilon Material, by Plasma Etching
Part of The American Vacuum Society 45th National Symposium in Baltimore, 1998.
-
PECVD by hollow cathodes
Part of Proceedings of the 41st Annual Tech.Conf. of the Society of Vacuum Coaters (SVC), Boston 1998, ISSN 0737-5921, Paper P-1, Proc., p. 315-320, 1998.
-
Properties of the Drift Region in a LDMOS Transistor
Part of The 18th Nordic Semiconductor Meeting, Linköping, Sweden, June, p. G-96-, 1998.
-
Selective SiOs to Si3N4 etching in inductively coupled fluorocarbon plasmas
Part of The 25th national symposium UNY-VAC, Albany NY, 1998.
-
Silicon semi-circular tapered structures made by diffusion limited HF:HNO3 wet etching
Part of Micromechanics Europe 1988, MME'98, Ulvik Norge, 1998.
-
Target Compound Layer Formation during Reactive Sputtering
Part of Presented at AVS 45th National Symposium in Baltimore, Maryland, USA, November 2-6, 1998.
-
Wet etching of single crystal quartz
Part of Workshop of Physical Chemistry of Wet Chemical Etching of Silicon, May 17-19, Holten, The Netherlands, 1998.
-
A Novel High-Frequency High-Voltage LDMOS Transistor using an Extended Gate RESURF Technology
Part of ISPSD´97, p. 45-48, 1997.
-
Analytical modelling of fibre holding elements in silicon
Part of MOEMS´97 Nov 18-21, Nara, Japan, 1997.
-
Angular dependence of the polysilicon etch rate during dry etching in SF6 and Cl2
Part of The 43rd International Symposium of the American Vacuum Society, Philadelphia PA, USA, 1997.
-
BESOI materials with diamond or aluminium as buried insulator
Part of DERA workshop on Novel Silicon-On-Insulator Materials and Applications, April 17-18, Malvern, UK, 1997.
-
Characterization and optimization of a dry etching process for silicon nitride spacer formation
Part of The 44th international symposium of the American Vacuum Society, San José, USA, 1997.
-
Chemical bath deposited CdS films with different impurity concentrations - Film characterization and Cu(In,Ga)Se2 solar cell results
Part of 14th European Photovoltaic Solar Energy Conf. 1326, 1997.
-
Cold Gas thrusters Micromachined in silicon - Design plan
Part of 2nd Round Table on Micro-Nano Technologies for space, ESTEC, Noordwijk NL, 1997.
-
Cold gas thrusters micromachined in silicon and design plan
Part of ESTEC, Noordwijk, The Netherlands, Oct 15-17, 1997.
-
Collection functions in chalcopyrite heterojunction solar cells: A comparison of Cu(In,Ga)(Se,S)2 absorbers
Part of The 14th European Photovoltaic Conf. 1299, 1997.
-
Colloidal Silica as a Final Polishing Slurry
Part of CMP´97. 4-5, p. 244-245, 1997.
-
DLTS spectra of thin film photovoltaic devices based on Cu(In,Ga)2
Part of The 14th European Photovoltaic Conf. 2153, 1997.
-
Etching through Si-Si direct bonded interfaces
Part of MME´97, 1997.
-
Etching through Si-Si direct bonded interfaces
Part of MME' 97, 1997.
-
Improvement of the Long-Term Stability of Polysilicon IC-Resistors by Fluorine Doping
Part of Materials Research Symposium. 472, p. 457-462, 1997.
-
Lattice Disorder Effects on the Vacancy-Oxygen Centre in Ion-Radiated Silicon
Part of Mat. Res. Soc. Symp. 469, p. 233-238, 1997.
-
Low-cost Single-mode Optical Passive Coupler Devices with an MT-interface Based on Polymeric Waveguides in BCB
Part of Proc ECIO´97, The 8th European Conference on Integrated Optics and Technical Exhibition, Opt. Soc. America, Washington DC, USA, p. 291-294, 1997.
-
Micro machined propulsion components
Part of 2nd Round Table on Micro-Nano Technologies for space, ESTEC, Noordwijk NL, 1997.
-
Modelling of the Gate Capacitance Behaviour of a High-Frequency Small-Signal LDMOS Transistor
Part of GigaHertz´97 in Kista, Sweden, p. 96-97, 1997.
-
Nitride titanium alloys for mechanical implants
Part of 13th European Conf on Biomaterials, 1997.
-
Quartz-Quartz Bonding
Part of ECS Annual meeting, 1997.
-
Rapid migration of defects in ion-implanted silicon
Part of Mat Res Soc Symp Proc Vol 469, p. 239-244, 1997.
-
Silicon surfaces for hydrophobic wafer bonding
Part of Proc of the Fourth International Symosium on Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochemical Society Proceedings Vol 97-36,, p. 87-94, 1997.
-
Silicon-On-Diamond MOS Transistors with Thermally Gate Oxide
Part of SOI Conference. 30-31, p. 30-31, 1997.
-
Sodium in Sputtered Mo Back Contacts for Cu(In,Ga)Se2 Devices: Incorporation, Diffusion and Relationship to Oxygen
Part of The 14th European Photovoltaic Solar Energy Conf. 1278, Barcelona Spain, 1997.
-
A lateral symmetrically bistable buckled beam
Part of MME´96, Oct 21-22. Barcelona, Spain, 1996.
-
A New High Voltage DMOS Transistor for Microwave Applications
Part of The 17th Nordic Semicondustor Meeting, Norway, June, 1996.
-
A new self aligned asymmetric lateral bipolar transistor
Part of The 17th Nordic Semiconductor Meeting, Norway, June, 1996.
-
Acoustic sensors for respiratory air flow - from basic principles to clinical evaluation and industrialization
Part of Proc IEEE - EMBS, Amsterdam Oct 31 - Nov 3, 1996, Abstract M5-1, 1996.
-
An experimental study and simulation of anisotropic wet etching of quartz
Part of MME´96, Oct 21-22, Barcelona, Spain, 1996.
-
CIGS Thin Film Solar Cells by the Coevaporation Method
Part of The 9th International Photovoltaic Science and Engineering Conference, Miyazaki, Japan, Nov 11-15, 1996.
-
Electrical Properties of the Silicon/Diamond Interface
Part of Presented at the 17th Nordic Semiconductor Meeting, Norway, June, 1996.
-
Micromechanics in optical microsystems - with focus on telecom systems
Part of MME´96, Barcelona, Spain, Oct 21-22, 1996.
-
Na in CIGS thin films
Part of The 10 Sunshine Workshop on Thin Film Solar Cells, Shinjuku, Tokyo, Japan, Nov 8-9, 1996.
-
Na incorporation and diffusion in CuIn1-xGaxSe2
Part of Proceedings of the 25th IEEE Photovoltaic Specialists Conference, Washington DC, USA, (IEEE, Piscataway), p. 985-, 1996.
-
Passive alignment and holding of devices using flexible tongues formed by selective etching
Part of MME´96, Oct 21-22, Barcelona, Spain, 1996.
-
Small- and large-area CIGS modules by coevaporation
Part of Proceedings of the 25th IEEE Photovoltaic Specialists Conference, Washington DC, USA, p. 801-, 1996.
-
A High-Voltage Giga-Hertz DMOS Transistor Integrated into a Standard CMOS Process
Part of GigaHertz´95, National symposium on -wave technology and high speed electronics, 1995.
-
A method for the determination of the angular dependence during dry etching
Part of The American Vacuum Society, 42nd National Symposium, Minneapolis, USA, Oct, 1995.
-
Compositional changes during ion-assisted deposition of TixW1-x barrier layers on structured surfaces
Part of The 42nd international symposium of the American Vacuum Society, San José, USA, 1995.
-
Fabrication of bulk silicon holding structures for mounting of optical fibres in V-grooves
Part of The SPIE conf on Micromachining and Microfabrication ´95, Oct 23-24, Austin, USA, 1995.
-
Integration of a Novel High-Voltage Giga-Hertz DMOS Transistor into a Standard CMOS Process
Part of IEEE IEDM Technical Digest, p. 975-978, 1995.
-
Mechanical issues of Mo back contacts for Cu(In,Ga)Se2 devices
Part of Proc of the 13th European Photovoltaic Solar Energy Conf, Nice, H.S. Stephens & Associates, Bedford, p. 1983-, 1995.
-
Microwave surfatron system for diamond film depositions
Part of International Symposium on Plasma Chemistry – ISPC 12, Minneapolis, USA, August 21-25, Paper no PK 1, 1995.
-
Na precursors for coevaporated Cu(In,Ga)Se2 photovoltaic films
Part of Proceedings of the 25th European Photovoltaic Solar Energy Conference, Nice, France, (H.S. Stephens & Associates, Bedford), p. 2080-, 1995.
-
Terracing of (100)-Si with one mask and one etching step using misaligned V-grooves
Part of Proc of the 6th Micromechanics Europé Workshop MME´95, Copenhagen, Denmark, 3-5 Sept, 1995.
-
The wheatstone GADGET, a simple circuit for measuring differential resistance variations
Part of Proc fo the 6th Micromachined Europé Workshop MME´95, Copenhagen, Denmark, Sept 3-5, 1995.
-
Thin film solar cell modules based on Cu(In,Ga)Se2 prepared by the coevaporation method
Part of Proceedings of the 13th European Photovoltaic Solar Energy Conference, Nice, France, p. 1451-, 1995.
-
High current gain lateral bipolar action in DMOS transistors
p. 221-224 1994.
-
High Current Gain Lateral Bipolar Action in DMOS Transistors
Part of Proceedings of ESSDERC, p. 221-224, 1994.
-
Steady State and Transient Thermal Characterization of Silicon on Diamond Materials
Part of Presented at the 16th Nordic Semiconductor Meeting, 1994.
-
Etching mechanism of silicon
Part of MEMS, 1993.
-
Formation of heat sinks using bonding and etch back technique in combination with diamond deposition
Part of Proceedings of 2nd Int. Symp. on Semiconductor Wafer Bonding, p. 382-, 1993.
-
High Current Properties of Combined Schottky/pn Diodes; interaction between Closely Located Schottky and pn Diodes
Part of Proceedings of ESSDERC, p. 227-230, 1993.
-
On the reliability of apnea alarm devices
p. 42- 1993.
-
Modeling of reactive sputtering
p. 9-18 1991.
-
Silicon etch stop formed by nitrogen implantation
p. 190-199 1991.
Publications
Articles in conference (non-refereed)
-
An On-Wafer De-Embedding Technique for Silicon Transistors at Microwave Frequencies
Part of IEEE ICMTS, Gothenburg, Sweden, 1999.
-
Design of a Chip Based Microanalytical Fluidic System Based on Electrochemical Detection using Redox Cycling
Part of Proc Int Eng Congress and Exposition, Nashville, Tenessee, Nov 14-19, 1999, 1999.
-
Micro sculpturing - Somewhat new materials and micromachining methods to meet new applications
Part of Eurosensors -99, 1999.
-
Microfluid Components in Diamond
Part of Proc of the 10th Int Conf on Solid-state Sensors and Actuators. Transducers´99, June 7-10, Sendai, Japan, p. 190-193, 1999.
-
Silicon on Diamond Heat Sinks by Bonding and Etch Back
Part of Proceedings of IEEE International SOI Conference, p. 58-59, 1993.
DOI for Silicon on Diamond Heat Sinks by Bonding and Etch Back
-
A Lateral Bipolar Transistor Concept Tested on SIMOX- and BSOI-Materials
Part of Proceednings IEEE International SOI Conference, p. 76-77, 1992.
DOI for A Lateral Bipolar Transistor Concept Tested on SIMOX- and BSOI-Materials